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| 型号： | ZXMN6A08E6TC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 2.8A SOT23-6 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 4.8A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 459pF @ 40V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-23-6 |
| 包装： | 带卷 (TR) |
ZXMN6A08E6
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 6)
Symbol
V DSS
V GS
Value
60
± 20
3.5
Unit
V
V
Continuous Drain Current
V GS = 10V
T A = +70°C (Note 6)
I D
2.8
A
(Note 5)
2.8
Pulsed Drain Current
V GS = 10V
(Note 7)
I DM
16
A
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 6)
(Note 7)
I S
I SM
2.6
16
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
P D
R θ JA
T J , T STG
1.1
8.8
1.7
13.6
113
73
-55 to +150
W
mW/°C
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t ≤ 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
ZXMN6A08E6
Document Number DS33376 Rev. 7 - 2
2 of 8
www.diodes.com
December 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN6A08G | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V SOT223 N-channel enhancement mode MOSFET |
| ZXMN6A08GTA | 功能描述:MOSFET 60V 3.8A N-Channel MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN6A08GTC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT223 N-channel enhancement mode MOSFET |
| ZXMN6A08K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN6A08KTC | 功能描述:MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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