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参数资料
| 型号： | 42S16400A |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1梅格位× 16位× 4银行（64兆位）同步动态RAM |
| 文件页数： | 28/55页 |
| 文件大小： | 472K |
| 代理商： | 42S16400A |
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IS42S16400A
ISSI
34
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.C
04/16/03
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
DIN a
DIN a+1
DOUT b
DOUT b+1
BANK n,
COL a
BANK m,
COL b
CAS Latency - 3 (BANK m)
tRP - BANK n
tRP -BANKm
WRITE - AP
BANK n
READ - AP
BANK m
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
READ with Burst of 4
Precharge
Internal States
tWR - BANK n
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0
T1
T2
T3
T4
T5
T6
T7
NOP
BANK n,
COL a
BANK m,
COL b
tRP - BANK n
tRP -BANKm
WRITE - AP
BANK n
WRITE - AP
BANK m
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
WRITE with Burst of 4
Write-Back
Internal States
tWR - BANK n
DIN a
DIN a+1
DIN a+2
DIN b
DIN b+1
DIN b+2
DIN b+3
WRITE with Auto Precharge
3. Interrupted by a READ (with or without auto precharge):
A READ to bank m will interrupt a WRITE on bank n when
registered, with the data-out appearing CAS latency later.
The PRECHARGE to bank n will begin after tWR is met,
where tWR begins when the READ to bank m is registered.
The last valid WRITE to bank n will be data-in registered
one clock prior to the READ to bank m.
4. Interrupted by a WRITE (with or without auto precharge):
AWRITE to bank m will interrupt a WRITE on bank n when
registered. The PRECHARGE to bank n will begin after
tWR is met, where tWR begins when the WRITE to bank
m is registered. The last valid data WRITE to bank n will
be data registered one clock prior to a WRITE to bank m.
Fig CAP 3 - WRITE With Auto Precharge interrupted by a READ
Fig CAP 4 - WRITE With Auto Precharge interrupted by a WRITE
相关PDF资料 |
PDF描述 |
|---|---|
| 42S16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S32200 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 4300-000 | EMI/RFI FILTER Hermetically Sealed |
| 4300-000LF | |
| 4300-001 | EMI/RFI FILTER Hermetically Sealed |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 42S16400B-6TLTR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| 42S16800A | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S16800L | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A60 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A70 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
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