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| 型号： | 42S16400A |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1梅格位× 16位× 4银行（64兆位）同步动态RAM |
| 文件页数： | 3/55页 |
| 文件大小： | 472K |
| 代理商： | 42S16400A |
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IS42S16400A
ISSI
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
11
Rev.C
04/16/03
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VCC MAX
Maximum Supply Voltage
–1.0 to +4.6
V
VCCQ MAX
Maximum Supply Voltage for Output Buffer
–1.0 to +4.6
V
VIN
Input Voltage
–1.0 to +4.6
V
VOUT
Output Voltage
–1.0 to +4.6
V
PD MAX
Allowable Power Dissipation
1
W
ICS
Output Shorted Current
50
mA
TOPR
Operating Temperature
Com.
0 to +70
°C
Ind.
–40 to +85
TSTG
Storage Temperature
–55 to +150
°C
DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC, VCCQ
Supply Voltage
3.0
3.3
3.6
V
VIH
Input High Voltage
2.0
—
VCC + 0.3
V
VIL
Input Low Voltage
-0.3
—
+0.8
V
CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
CIN1
Input Capacitance: A0-A11, BA0, BA1
—
4
pF
CIN2
Input Capacitance: (CLK, CKE,
CS, RAS, CAS, WE, LDQM, UDQM)
—
4
pF
CI/O
Data Input/Output Capacitance: I/O0-I/O15
—
5
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. All voltages are referenced to GND.
相关PDF资料 |
PDF描述 |
|---|---|
| 42S16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S32200 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 4300-000 | EMI/RFI FILTER Hermetically Sealed |
| 4300-000LF | |
| 4300-001 | EMI/RFI FILTER Hermetically Sealed |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 42S16400B-6TLTR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| 42S16800A | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S16800L | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A60 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A70 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
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