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参数资料
| 型号： | 42S16400A |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 1梅格位× 16位× 4银行（64兆位）同步动态RAM |
| 文件页数： | 4/55页 |
| 文件大小： | 472K |
| 代理商： | 42S16400A |
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IS42S16400A
ISSI
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.C
04/16/03
DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
Speed
Min.
Max.
Unit
IIL
Input Leakage Current
0V
≤ VIN ≤ VCC, with pins other than
–5
5
A
the tested pin at 0V
IOL
Output Leakage Current
Output is disabled, 0V
≤ VOUT ≤ VCC
–5
5
A
VOH
Output High Voltage Level
IOUT = –2 mA
2.4
—
V
VOL
Output Low Voltage Level
IOUT = +2 mA
—
0.4
V
ICC1
Operating Current(1,2)
One Bank Operation,
CAS latency = 3 Com.
-6
—
130
mA
Com.
-7
—
120
mA
BurstLength=1
Ind.
-7
—
145
mA
tRC
≥ tRC (min.)
Com.
-10
—
110
mA
IOUT = 0mA
Ind.
-10
—
125
mA
ICC2P
Precharge Standby Current
CKE
≤ VIL (MAX)tCK = tCK (MIN) Com.
—
3
mA
Ind.
—
4
mA
ICC2PS
(In Power-Down Mode)
tCK =
∞
Com.
—
2
mA
Ind.
—
3
mA
ICC2N
Precharge Standby Current
CKE
≥ VIH (MIN)tCK = tCK (MIN)—
—
30
mA
ICC2NS
(In Non Power-Down Mode)
tCK =
∞
Com.
—
10
mA
Ind.
—
15
mA
ICC3P
Active Standby Current
CKE
≤ VIL (MAX)tCK = tCK (MIN) Com.
—
3
mA
Ind.
—
7
mA
ICC3PS
(In Power-Down Mode)
tCK =
∞
Com.
—
3
mA
Ind.
—
5
mA
ICC3N
Active Standby Current
CKE
≥ VIH (MIN)tCK = tCK (MIN)—
—
40
mA
ICC3NS
(In Non Power-Down Mode)
tCK =
∞
Com.
—
20
mA
Ind.
—
25
mA
Com.
-6
—
100
mA
ICC4
OperatingCurrent
tCK = tCK (MIN)
CAS latency = 3
Com.
-7
—
90
mA
(In Burst Mode)(1)
IOUT = 0mA
Ind.
-7
—
110
mA
Com.
-10
—
80
mA
Ind.
-10
—
100
mA
Com.
-6
—
100
mA
CAS latency = 2
Com.
-7
—
90
mA
Ind.
-7
—
110
mA
Com.
-10
—
80
mA
Ind.
-10
—
100
mA
Com.
-6
—
150
mA
ICC5
Auto-Refresh Current
tRC = tRC (MIN)
CAS latency = 3 Com.
-7
—
130
mA
Ind.
-7
—
150
mA
Com.
-10
—
110
mA
Ind.
-10
—
130
mA
Com.
-6
—
130
mA
CAS latency = 2 Com.
-7
—
100
mA
Ind.
-7
—
120
mA
Com.
-10
—
90
mA
Ind.
-10
—
100
mA
ICC6
Self-RefreshCurrent
CKE
≤ 0.2V
—
1.5
mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 F should be inserted between Vcc and GND for each memory chip
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
相关PDF资料 |
PDF描述 |
|---|---|
| 42S16800A | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S32200 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 4300-000 | EMI/RFI FILTER Hermetically Sealed |
| 4300-000LF | |
| 4300-001 | EMI/RFI FILTER Hermetically Sealed |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 42S16400B-6TLTR | 制造商:Integrated Silicon Solution Inc 功能描述: |
| 42S16800A | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 42S16800L | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A60 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A70 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
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