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参数资料
| 型号： | ADE5166ASTZF62-RL |
| 厂商： | Analog Devices Inc |
| 文件页数： | 107/156页 |
| 文件大小： | 0K |
| 描述： | IC METER/8052/RTC/LCD DRV 64LQFP |
| 产品变化通告： | Product Discontinuance 27/Oct/2011 |
| 标准包装： | 1,500 |
| 输入阻抗： | * |
| 测量误差： | * |
| 电压 - 高输入/输出： | * |
| 电压 - 低输入/输出： | * |
| 电流 - 电源： | * |
| 电源电压： | * |
| 测量仪表类型： | * |
| 工作温度： | * |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 64-LQFP |
| 供应商设备封装： | 64-LQFP（10x10） |
| 包装： | 带卷 (TR) |
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Data Sheet
FLASH MEMORY
FLASH MEMORY OVERVIEW
Flash memory is a type of nonvolatile memory that is in-circuit
programmable. The default, erased state of a byte of flash memory
is 0xFF. When a byte of flash memory is programmed, the required
bits change from 1 to 0. The flash memory must be erased to turn
the 0s back to 1s. A byte of flash memory cannot, however, be
erased individually. The entire segment, or page, of flash
memory that contains the byte must be erased.
The ADE5166/ADE5169/ADE5566/ADE5569 provide 62 bytes
of flash program/information memory. This memory is segmented
into 124 pages that each contain 512 bytes. To reprogram one
byte of flash memory, the other 511 bytes in that page must be
erased. The flash memory can be erased by page or all at once in
a mass erase. There is a command to verify that a flash write
operation has completed successfully. The ADE5166/ADE5169/
ADE5166/ADE5169/ADE5566/ADE5569
Retention is the ability of the flash memory to retain its
programmed data over time. Again, the parts have been
qualified in accordance with the formal retention lifetime
specification, JEDEC Standard 22 Method A117, at a specific
junction temperature (T J = 55°C). As part of this qualification
procedure, the flash memory is cycled to its specified endurance
limit, as described previously, before data retention is charac-
terized. This means that the flash memory is guaranteed to retain
its data for its full specified retention lifetime every time the
flash memory is reprogrammed. It should also be noted that
retention lifetime, based on an activation energy of 0.6 eV,
derates with T J , as shown in Figure 92.
300
250
ADE5566/ADE5569 flash memory controller also offers
configurable flash memory protection.
The 62 bytes of flash memory are provided on chip to facilitate
code execution without any external discrete ROM device require-
ments. The program memory can be programmed in circuit,
using the serial download mode provided or using conventional
third-party memory programmers.
200
150
100
50
ANALOG DEVICES
SPECIFICATION
100 YEARS MIN.
AT T J = 55°C
Flash/EE Memory Reliability
0
40
50
60
70
80
90
100
110
The flash memory arrays on the ADE5166/ADE5169/ADE5566/
ADE5569 are fully qualified for two key Flash/EE memory cha-
racteristics: Flash/EE memory cycling endurance and Flash/EE
memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four independent,
sequential events, as follows:
T J JUNCTION TEMPERATURE (°C)
Figure 92. Flash/EE Memory Data Retention
FLASH MEMORY ORGANIZATION
The ADE5166/ADE5169/ADE5566/ADE5569 contain a 64 kB
array of Flash/EE program memory. The upper 2 kB contain per-
manently embedded firmware, allowing in-circuit serial download,
serial debug, and nonintrusive single-pin emulation. The 2 kB
of embedded firmware also contain essential coefficients that
1.
2.
3.
4.
Initial page erase sequence
Read/verify sequence
Byte program sequence
Second read/verify sequence
provide calibration to peripherals such as the ADCs and reference.
The embedded firmware contained in the upper 2 kB of
Flash/EE memory is not accessible by the user.
EMBEDDED DOWNLOAD/DEBUG KERNEL
In reliability qualification, every byte in both the program and
data Flash/EE memory is cycled from 0x00 to 0xFF until a first
fail is recorded, signifying the endurance limit of the on-chip
Flash/EE memory.
As indicated in Table 4, the ADE5166/ADE5169/ADE5566/
ADE5569 flash memory endurance qualification has been carried
out in accordance with JEDEC Standard 22 Method A117 over
the industrial temperature range of ?40°C, +25°C, +85°C, and
+125°C. The results allow the specification of a minimum endur-
ance figure over supply and temperature of 100,000 cycles, with a
minimum endurance figure of 20,000 cycles of operation at 25°C.
PERMANENTLY EMBEDDED FIRMWARE ALLOWS
CODE TO BE DOWNLOADED TO ANY OF THE
62 kB OF ON-CHIP PROGRAM MEMORY.
THE KERNEL PROGRAM APPEARS AS NOP
INSTRUCTIONS TO USER CODE.
USER PROGRAM MEMORY
62 kB OF FLASH/EE PROGRAM MEMORY
ARE AVAILABLE TO THE USER. ALL OF THIS
SPACE CAN BE PROGRAMMED FROM THE
PERMANENTLY EMBEDDED DOWNLOAD/DEBUG
KERNEL OR IN PARALLEL PROGRAMMING MODE.
Figure 93. Flash Memory Organization
0×FFFF
2kB
0×F800
0×F7FF
62kB
0×0000
Rev. D | Page 107 of 156
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ADE5169 | 制造商:AD 制造商全称:Analog Devices 功能描述:Single-Phase Energy Measurement IC with 8052 MCU, RTC, and LCD Driver |
| ADE5169ASTZF62 | 功能描述:IC METER/8052/RTC/LCD DR 64LQFP RoHS:是 类别:集成电路 (IC) >> PMIC - 能量测量 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:* |
| ADE5169ASTZF62-RL | 功能描述:IC METER/8052/RTC/LCD DRV 64LQFP RoHS:是 类别:集成电路 (IC) >> PMIC - 能量测量 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:* |
| ADE5566 | 制造商:AD 制造商全称:Analog Devices 功能描述:Single-Phase Energy Measurement IC with 8052 MCU, RTC, and LCD Driver |
| ADE5566ASTZF62 | 功能描述:IC ENERGY METERING 1PHASE 64LQFP RoHS:是 类别:集成电路 (IC) >> PMIC - 能量测量 系列:- 产品培训模块:Lead (SnPb) Finish for COTS Obsolescence Mitigation Program 标准包装:2,500 系列:* |
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