- 您现在的位置：买卖IC网 > Datasheet目录419 > FDMA1029PZ (Fairchild Semiconductor)IC MOSFET P-CH DUAL MICROFET 2X2 Datasheet资料下载
参数资料
| 型号： | FDMA1029PZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET P-CH DUAL MICROFET 2X2 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 3.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 540pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA1029PZDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
' BV DSS
' T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 P A
I D = –250 P A, Referenced to 25 q C
–20
–12
V
mV/ q C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
V DS = –16 V,
V GS = ± 12 V,
V GS = 0 V
V DS = 0 V
–1
±10
P A
P A
On Characteristics
(Note 2)
V GS(th)
' V GS(th)
' T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 P A
I D = –250 P A, Referenced to 25 q C
V GS = –4.5 V, I D = –3.1 A
–0.6
–1.0
4
60
–1.5
95
V
mV/ q C
m :
On–Resistance
V GS = –2.5 V, I D = –2.5 A
V GS = –4.5 V, I D = –3.1 A, T J =125 q C
88
87
141
140
g FS
Forward Transconductance
V DS = –10 V,
I D = –3.1 A
–11
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10 V,
f = 1.0 MHz
V GS = 0 V,
540
120
100
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
V DD = –10 V, I D = –1 A,
V GS = –4.5 V, R GEN = 6 :
13
11
37
36
24
20
59
58
ns
ns
ns
ns
Q g
Q gs
Total Gate Charge
Gate–Source Charge
V DS = –10 V,
V GS = –4.5 V
I D = –3.1 A,
7.0
1.1
10
nC
nC
Q gd
Gate–Drain Charge
2.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Source–Drain Diode Forward Current
-1.1
A
V SD
Source–Drain Diode Forward
V GS = 0 V, I S = –1.1 A
(Note 2)
–0.8
–1.2
V
Voltage
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = –3.1 A,
dI F /dt = 100 A/μs
25
9
ns
nC
FDMA1029PZ Rev.B3(W)
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA1032CZ | IC MOSFET N/P-CHAN MICROFET 2X2 |
| FDMA2002NZ | IC MOSFET N-CH DUAL MICROFET 2X2 |
| FDMA291P | MOSFET P-CH 20V 6.6A MFET 2X2 |
| FDMA3023PZ | MOSFET P-CH DUAL 30V MICROFET6 |
| FDMA3028N | MOSFET N-CH 30V DUAL 6MICROFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA1029PZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual P-Channel PowerTrench㈢ MOSFET |
| FDMA1032CZ | 功能描述:MOSFET 20V Complementary PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA1032CZ | 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET 20V MICROFET 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N/P CH MOSFET, 20V, MICROFET |
| FDMA1032CZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:20V Complementary PowerTrench㈢ MOSFE |
| FDMA1430JP | 功能描述:MOSFET P-Chan -30V -2.9A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。