参数资料
型号: GS81302D08E-333
厂商: GSI TECHNOLOGY
元件分类: SRAM
英文描述: 16M X 8 DDR SRAM, 0.45 ns, PBGA165
封装: 15 X 17 MM, 1 MM PITCH, FPBGA-165
文件页数: 6/34页
文件大小: 536K
代理商: GS81302D08E-333
GS81302D08/09/18/36E-375/350/333/300/250
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2011
14/34
2011, GSI Technology
State Diagram
Power-Up
Read NOP
Load New
Read Address
D Count = 0
DDR Read
D Count = D Count + 1
Write NOP
Load New
Write Address
D Count = 0
DDR Write
D Count = D Count + 1
WRITE
READ
D Count = 2
WRITE
D Count = 2
READ
WRITE
Always
READ
D Count = 2
Notes:
1. Internal burst counter is fixed as 2-bit linear (i.e., when first address is A0+0, next internal burst address is A0+1.
2. “READ” refers to read active status with R = Low, “READ” refers to read inactive status with R = High. The same is
true for “WRITE” and “WRITE”.
3. Read and write state machine can be active simultaneously.
4. State machine control timing sequence is controlled by K.
READ
D Count = 1
Always
Increment
Read Address
WRITE
D Count = 2
Increment
Write Address
WRITE
D Count = 1
Always
相关PDF资料
PDF描述
GS81302D37GE-400I 4M X 36 DDR SRAM, 0.45 ns, PBGA165
GS81302D10E-300I 16M X 9 DDR SRAM, 0.45 ns, PBGA165
GS81302T09E-375T 16M X 9 DDR SRAM, 0.45 ns, PBGA165
GS81302T18E-350T 8M X 18 DDR SRAM, 0.45 ns, PBGA165
GS81302T10E-350I 16M X 9 DDR SRAM, 0.45 ns, PBGA165
相关代理商/技术参数
参数描述
GS81302D10E-300 制造商:GSI Technology 功能描述:GS81302D10E-300 - Trays
GS81302D10E-333 制造商:GSI Technology 功能描述:GS81302D10E-333 - Trays
GS81302D10E-333I 制造商:GSI Technology 功能描述:GS81302D10E-333I - Trays
GS81302D10E-350 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS81302D10E-375 制造商:GSI Technology 功能描述:GS81302D10E-375 - Trays