参数资料
型号: HY5DU56422ALF-J
厂商: HYNIX SEMICONDUCTOR INC
元件分类: DRAM
英文描述: 64M X 4 DDR DRAM, 0.7 ns, PBGA60
封装: FBGA-60
文件页数: 6/36页
文件大小: 395K
代理商: HY5DU56422ALF-J
Rev. 0.1/Apr. 02
14
HY5DU56422A(L)F
HY5DU56822A(L)F
HY5DU561622A(L)F
OPERATION COMMAND TRUTH TABLE-IV
Note :
1. H - Logic High Level, L - Logic Low Level, X - Don’t Care, V - Valid Data Input,
BA - Bank Address, AP - AutoPrecharge Address, CA - Column Address, RA - Row Address, NOP - NO Operation.
2. All entries assume that CKE was active(high level) during the preceding clock cycle.
3. If both banks are idle and CKE is inactive(low level), then in power down mode.
4. Illegal to bank in specified state. Function may be legal in the bank indicated by Bank Address(BA) depending on the state of
that bank.
5. If both banks are idle and CKE is inactive(low level), then self refresh mode.
6. Illegal if tRCD is not met.
7. Illegal if tRAS is not met.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Illegal if tRRD is not met.
10. Illegal for single bank, but legal for other banks in multi-bank devices.
11. Illegal for all banks.
Current
State
/CS
/RAS
/CAS
/WE
Address
Command
Action
WRITE
L
H
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL11
LL
H
BA, RA
ACT
ILLEGAL11
LL
H
L
BA, AP
PRE/PALL
ILLEGAL11
LL
L
H
X
AREF/SREF
ILLEGAL11
LL
L
OPCODE
MRS
ILLEGAL11
MODE
REGISTER
ACCESSING
H
X
DSEL
NOP - Enter IDLE after tMRD
L
H
X
NOP
NOP - Enter IDLE after tMRD
LH
H
L
X
BST
ILLEGAL11
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL11
L
H
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL11
LL
H
BA, RA
ACT
ILLEGAL11
LL
H
L
BA, AP
PRE/PALL
ILLEGAL11
LL
L
H
X
AREF/SREF
ILLEGAL11
LL
L
OPCODE
MRS
ILLEGAL11
相关PDF资料
PDF描述
HY5MS5B6LF-H 16M X 16 DDR DRAM, 6.5 ns, PBGA60
HY5PS1G831ALFP-C4 128M X 8 DDR DRAM, PBGA68
HY5PS1G831ALFP-Y5 128M X 8 DDR DRAM, PBGA68
HY5RS573225AFP-16L 8M X 32 DDR DRAM, 0.28 ns, PBGA136
HY5V28CF-S 16M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA54
相关代理商/技术参数
参数描述
HY5DU56422ALT 制造商:未知厂家 制造商全称:未知厂家 功能描述:64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
HY5DU56422ALT-H 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256M-S DDR SDRAM
HY5DU56422ALT-J 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256M-S DDR SDRAM
HY5DU56422ALT-K 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256M-S DDR SDRAM
HY5DU56422ALT-L 制造商:HYNIX 制造商全称:Hynix Semiconductor 功能描述:256M-S DDR SDRAM