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参数资料
型号： IDT70T631S
厂商： Integrated Device Technology, Inc.
英文描述： 122 x 32 pixel format, Compact LCD size
中文描述： 高速2.5V的512/256K与3.3V 5011 2.5V的接口× 18 ASYNCHRONO美国双端口静态RAM
文件页数： 17/27页
文件大小： 342K
代理商： IDT70T631S
17
IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
70T633/1S8
(6)
Preliminary
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to "Timing Waveform of Write with Port-to-Port Read and
BUSY
(M/
S
= V
IH
)".
2. To ensure that the earlier of the two ports wins.
3. t
BDD
is a calculated parameter and is the greater of the Max. spec, t
WDD
– t
WP
(actual), or t
DDD
– t
DW
(actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
6. 8ns Commercial and 10ns Industrial speed grades are available in BF-208 and BC-256 packages only.
Symbol
Parameter
Com'l Only
70T633/1S10
Com'l
& Ind
(6)
70T633/1S12
Com'l
& Ind
70T633/1S15
Com'l Only
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
BUSY
TIMING (M/
S
=V
IH
)
t
BAA
BUSY
Access Time from Address Match
____
8
____
10
____
12
____
15
ns
t
BDA
BUSY
Disable Time from Address Not Matched
____
8
____
10
____
12
____
15
ns
t
BAC
BUSY
Access Time from Chip Enable Low
____
8
____
10
____
12
____
15
ns
t
BDC
BUSY
Disable Time from Chip Enable High
____
8
____
10
____
12
____
15
ns
t
APS
Arbitration Priority Set-up Time
(2)
2.5
____
2.5
____
2.5
____
2.5
____
ns
t
BDD
BUSY
Disable to Valid Data
(3)
____
8
____
10
____
12
____
15
ns
t
WH
Write Hold After
BUSY
(5)
6
____
7
____
9
____
12
____
ns
BUSY
TIMING (M/
S
=V
IL
)
t
WB
BUSY
Input to Write
(4)
0
____
0
____
0
____
0
____
ns
t
WH
Write Hold After
BUSY
(5)
6
____
7
____
9
____
12
____
ns
PORT-TO-PORT DELAY TIMING
t
WDD
Write Pulse to Data Delay
(1)
____
12
____
14
____
16
____
20
ns
t
DDD
Write Data Valid to Read Data Delay
(1)
____
12
____
14
____
16
____
20
ns
5670 tbl 15
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
(1,2,3)
Symbol
Parameter
70T633/1S8
(4)
Com'l Only
70T633/1S10
Com'l
& Ind
(4)
70T6331S12
Com'l
& Ind
70T633/1S15
Com'l Only
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
SLEEP MODE TIMING (ZZx=V
IH
)
t
ZZS
Sleep Mode Set Time
8
____
10
____
12
____
15
____
t
ZZR
Sleep Mode Reset Time
8
____
10
____
12
____
15
____
t
ZZPD
Sleep Mode Power Down Time
(5)
8
____
10
____
12
____
15
____
t
ZZPU
Sleep Mode Power Up Time
(5)
____
0
____
0
____
0
____
0
5670 tbl 15a
NOTES:
1. Timing is the same for both ports.
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx,
INT
x, M/
S
and the sleep mode pins themselves (ZZx) are not affected
during sleep mode. It is recommended that boundary scan not be operated during sleep mode.
3. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details.
4. 8ns Commercial and 10ns Industrial speed grades are available in BF-208 and BC-256 packages only.
5. This parameter is guaranteed by device characterization, but is not production tested.
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相关代理商/技术参数
参数描述
IDT70T631S10BC 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T631S10BC8 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T631S10BCI 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T631S10BCI8 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR)
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