参数资料
型号: IDT70T631S
厂商: Integrated Device Technology, Inc.
英文描述: 122 x 32 pixel format, Compact LCD size
中文描述: 高速2.5V的512/256K与3.3V 5011 2.5V的接口× 18 ASYNCHRONO美国双端口静态RAM
文件页数: 27/27页
文件大小: 342K
代理商: IDT70T631S
27
IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Ordering Information
Preliminary
5670 drw 24
A
Power
999
Speed
A
Package
A
Process/
Temperature
Range
Blank
I
Commercial (0
°
C to +70
°
C)
Industrial (-40
°
C to +85
°
C)
BC
DD
BF
256-ball BGA (BC-256)
144-pin TQFP (DD-144)
208-ball fpBGA (BF-208)
8
10
12
15
S
Standard Power
XXXXX
Device
Type
9Mbit (512K x 18) 2.5V Asynchronous Dual-Port RAM
4Mbit (256K x 18) 2.5V Asynchronous Dual-Port RAM
70T633
70T631
IDT
Speed in nanoseconds
Commercial Only
(1)
Commercial & Industrial
(1)
Commercial & Industrial
Commercial Only
.
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
Preliminary Datasheet:
Definition
"PRELIMINARY' datasheets contain descriptions for products that are in early release.
Datasheet Document History:
04/25/03:
10/01/03:
Initial Datasheet
Page 9 Added 8ns speed DC power numbers to DC Electrical Characteristics Table
Page 9 Updated DC power numbers for 10, 12 & 15ns speeds in the DC Electrical Characteristics Table
Page 9, 11, 15, 17 & 25 Added footnote that indicates that 8ns speed is available in BF-208 and BC-256 packages only
Page 10 Added Capacitance Derating Drawing
Page 11, 15 & 17 Added 8ns AC timing numbers to the AC Electrical Characteristics Tables
Page 11 Added t
SOE
and t
LZOB
to the AC Read Cycle Electrical Characteristics Table
Page 12 Added t
LZOB
to the Waveform of Read Cycles Drawing
Page 14 Added t
SOE
to Timing Waveform of Semaphore Read after Write Timing, Either Side Drawing
Page 1 & 25 Added 8ns speed grade and 10ns I-temp to features and to ordering information
Page 1, 14 & 15 Added RapidWrite Mode Write Cycle text and waveforms
Page 15 Corrected t
ARF
to 1.5V/ns Min.
10/20/03:
CORPORATE HEADQUARTERS
2975 Stender Way
Santa Clara, CA 95054
for SALES:
800-345-7015 or 408-727-6116
fax: 408-492-8674
www.idt.com
for Tech Support:
831-754-4613
DualPortHelp@idt.com
NOTE:
1.
8ns Commercial and 10ns Industrial speed grades are available in BF-208 and BC-256 packages only
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相关代理商/技术参数
参数描述
IDT70T631S10BC 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T631S10BC8 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T631S10BCI 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T631S10BCI8 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70T631S10BF 功能描述:IC SRAM 4MBIT 10NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)