参数资料
型号: IP-ASI
厂商: Altera
文件页数: 14/27页
文件大小: 0K
描述: IP VIDEO INTERFACE - ASI
标准包装: 1
系列: *
类型: MegaCore
功能: 数字视频广播用接收器/收发器
许可证: 初始许可证
Chapter 2: Getting Started
2–5
Compile the Design and Program a Device
4. In the New Test Bench Settings dialog box, perform the following steps:
a. In the Test bench name box, type the testbench setup name.
b. In the Top level module in test bench box, type the following as the project
testbench name, tb_asi_mc .
c. In the Design instance in test bench box, type the name of the top-level
instance.
d. Under Simulation period , set End simulation at to 500 μs .
e. Add the testbench files. In the File name field, browse to the location of the
testbench, tb_asi_mc , click Open and then click Add .
f. Select the files and click OK .
5. On the Processing menu, point to Start and click Start Analysis & Elaboration .
6. On the Tools menu, point to Run EDA Simulation Tool and click EDA RTL
Simulation .
Compile the Design and Program a Device
You can use the Quartus II software to compile your design. Refer to Quartus II Help
for instructions on performing compilation.
After you have compiled your design, program your targeted Altera device and
verify your design in hardware.
January 2014
Altera Corporation
Asynchronous Serial Interface (ASI) MegaCore Function User Guide
相关PDF资料
PDF描述
IP-ED8B10B IP 8B10B ENCODER/DECODER
IP-FFT IP FFT/IFFT
IP-FIR IP FIR COMPILER
IP-NCO IP NCO COMPILER
IP-NIOS IP NIOS II MEGACORE
相关代理商/技术参数
参数描述
IPB009N03L G 功能描述:MOSFET OptiMOS 3 PWR TRANS 30V 180A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPB009N03LG 制造商:Infineon Technologies AG 功能描述:MOSFET N-Ch 30V 180A OptiMOS3 TO263-7
IPB009N03LGATMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:N-KANAL POWER MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 180A TO263-7
IPB010N06N 功能描述:MOSFET 60V TO-263 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPB010N06NATMA1 功能描述:MOSFET MV POWER MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube