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| 型号： | IRF7404QTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 6.7A 8-SOIC |
| 产品目录绘图： | IR Hexfet 8-SOIC |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 3.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1500pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | IRF7404QTRPBFDKR |
PD - 96127A
IRF7404QPbF
HEXFET ? Power MOSFET
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l
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Advanced Process Technology
Ultra Low On-Resistance
P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S
S
S
G
1
2
3
4
8
7
6
5
A
D
D
D
D
V DSS = -20V
R DS(on) = 0.040 ?
Top View
Description
These HEXFET ? Power MOSFET's in package
utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon
area. Additional features of these HEXFET
Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety
of power applications. This surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
Absolute Maximum Ratings
SO-8
Parameter
Max.
Units
I D @ T A = 25°C
10 Sec. Pulsed Drain Current, V GS @ -4.5V
-7.7
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
-6.7
-5.4
-27
2.5
0.02
± 12
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R θ JA
Maximum Junction-to-Ambient ?
???
50
°C/W
www.irf.com
1
08/09/10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7404TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 6.7A 8SOIC - Tape and Reel |
| IRF7404TRPBF | 功能描述:MOSFET MOSFT PCh -20V -6.7A 40mOhm 33.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7404TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 20 V 2.5 W 50 nC Hexfet Power Mosfet Surface Mount - SOIC-8 |
| IRF7406 | 制造商:International Rectifier 功能描述:MOSFET P LOGIC SO-8 |
| IRF7406GTRPBF | 功能描述:MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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