- 您现在的位置：买卖IC网 > Datasheet目录444 > IRF7404QTRPBF (International Rectifier)MOSFET P-CH 20V 6.7A 8-SOIC Datasheet资料下载
参数资料
| 型号： | IRF7404QTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 6.7A 8-SOIC |
| 产品目录绘图： | IR Hexfet 8-SOIC |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 3.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 50nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1500pF @ 15V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | IRF7404QTRPBFDKR |
IRF7404QPbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
??? 0.040 V GS = -4.5V, I D = -3.2A ?
??? 0.060 V GS = -2.7V, I D = -2.7A ?
??? -1.0 V DS = -16V, V GS = 0V
??? -25 V DS = -16V, V GS = 0V, T J = 125°C
??? -100 V GS = -12V
32 ??? I D = -3.2A
100 ??? R G = 6.0 ?
V (BR)DSS
? V (BR)DSS / ? T J
R DS(ON)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-20
???
???
???
-0.70
6.8
???
???
???
???
???
???
???
???
???
???
???
??? ??? V V GS = 0V, ID = -250μA
-0.012 ??? V/°C Reference to 25°C, I D = -1mA
?
??? ??? V V DS = V GS , I D = -250μA
??? ??? S V DS = -15V, I D = -3.2A
μA
nA
??? 100 V GS = 12V
??? 50 I D = -3.2A
??? 5.5 nC V DS = -16V
??? 21 V GS = -4.5V, See Fig. 6 and 12 ?
14 ??? V DD = -10V
ns
65 ??? R D = 3.1 ?, See Fig. 10 ?
L D
L S
Internal Drain Inductance
Internal Source Inductance
???
???
2.5
4.0
???
???
nH
Between lead tip
and center of die contact
G
D
S
C iss
Input Capacitance
??? 1500 ???
V GS = 0V
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
??? 730 ???
??? 340 ???
pF
V DS = -15V
? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
???
???
???
???
-3.1
-27
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
???
???
???
???
69
71
-1.0
100
110
V
ns
μC
T J = 25°C, I S = -2.0A, V GS = 0V ?
T J = 25°C, I F = -3.2A
di/dt = 100A/μs ?
t on
Notes:
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ -3.2A, di/dt ≤ -65A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
2
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
相关PDF资料 |
PDF描述 |
|---|---|
| IRF7413ATR | MOSFET N-CH 30V 12A 8-SOIC |
| IRF7413QTRPBF | MOSFET N-CH 30V 13A 8-SOIC |
| IRF7416QTRPBF | MOSFET P-CH 30V 10A 8-SOIC |
| IRF7421D1TR | MOSFET N-CH 30V 5.8A 8-SOIC |
| IRF7422D2TR | MOSFET P-CH 20V 4.3A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7404TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 6.7A 8SOIC - Tape and Reel |
| IRF7404TRPBF | 功能描述:MOSFET MOSFT PCh -20V -6.7A 40mOhm 33.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7404TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 20 V 2.5 W 50 nC Hexfet Power Mosfet Surface Mount - SOIC-8 |
| IRF7406 | 制造商:International Rectifier 功能描述:MOSFET P LOGIC SO-8 |
| IRF7406GTRPBF | 功能描述:MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。