参数资料
型号: IRF7404QTRPBF
厂商: International Rectifier
文件页数: 9/9页
文件大小: 0K
描述: MOSFET P-CH 20V 6.7A 8-SOIC
产品目录绘图: IR Hexfet 8-SOIC
标准包装: 1
系列: HEXFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.7A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 3.2A,4.5V
Id 时的 Vgs(th)(最大): 700mV @ 250µA
闸电荷(Qg) @ Vgs: 50nC @ 4.5V
输入电容 (Ciss) @ Vds: 1500pF @ 15V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: IRF7404QTRPBFDKR
IRF7404QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information . 08/2010
www.irf.com
9
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