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参数资料
| 型号： | IRGS15B60KDTRR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 31 A, 600 V, N-CHANNEL IGBT |
| 封装： | PLASTIC, D2PAK-3 |
| 文件页数： | 1/16页 |
| 文件大小： | 824K |
| 代理商： | IRGS15B60KDTRR |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
10/03/05
Features
Low VCE (on) Non Punch Through IGBT
Technology.
Low Diode VF.
10s Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free
www.irf.com
1
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
31
IC @ TC = 100°C
Continuous Collector Current
15
ICM
Pulsed Collector Current
62
ILM
Clamped Inductive Load Current
62
A
IF @ TC = 25°C
Diode Continuous Forward Current
31
IF @ TC = 100°C
Diode Continuous Forward Current
15
IFM
Diode Maximum Forward Current
64
VGE
Gate-to-Emitter Voltage
± 20
V
PD @ TC = 25°C
Maximum Power Dissipation
208
PD @ TC = 100°C
Maximum Power Dissipation
83
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
W
IRGB15B60KDPbF
IRGS15B60KDPbF
IRGSL15B60KDPbF
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case - IGBT
–––
0.6
RθJC
Junction-to-Case - Diode
–––
2.1
RθCS
Case-to-Sink, flat, greased surface
–––
0.50
–––
°C/W
RθJA
Junction-to-Ambient, typical socket mount
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
–––
40
Wt
Weight
–––
1.44
–––
g
E
G
n-channel
C
VCES = 600V
IC = 15A, TC=100°C
tsc > 10s, TJ=150°C
VCE(on) typ. = 1.8V
D2Pak
IRGS15B60KDPbF
TO-220AB
IRGB15B60KDPbF
TO-262
IRGSL15B60KDPbF
PD - 95194A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGS15B60KDTRRP | 功能描述:IGBT 模块 600V 15A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IRGS15B60KPBF | 功能描述:IGBT 晶体管 600V 15A 1.8V Welding SMPS UPS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGS30B60 | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS30B60K | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS30B60KPBF | 功能描述:IGBT 晶体管 600V ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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