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参数资料
| 型号： | IRHM8150UPBF |
| 元件分类： | JFETs |
| 英文描述： | 34 A, 100 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 444K |
| 代理商： | IRHM8150UPBF |
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
34
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
21
IDM
Pulsed Drain Current
136
PD @ TC = 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
34
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (Typical)
g
PD - 90675C
Pre-Irradiation
International Rectifiers RADHard HEXFET technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
oC
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
8/14/01
www.irf.com
1
IRHM7150
JANSR2N7268
100V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD Hard
HEXFET
HEXFET
TECHNOLOGY
TECHNOLOGY
Product Summary
Part Number Radiation Level
Part Number Radiation Level R
R
RDS(on)
DS(on)
IIIIIDDDDD
QPL Part Number
IRHM7150
100K Rads (Si)
0.065
34A
JANSR2N7268
IRHM3150
300K Rads (Si)
0.065
34A
JANSF2N7268
IRHM4150
600K Rads (Si)
0.065
34A
JANSG2N7268
IRHM8150
1000K Rads (Si) 0.065
34A
JANSH2N7268
Features:
!
Single Event Effect (SEE) Hardened
!
Low RDS(on)
!
Low Total Gate Charge
!
Proton Tolerant
!
Simple Drive Requirements
!
Ease of Paralleling
!
Hermetically Sealed
!
Ceramic Eyelets
!
Light Weight
For footnotes refer to the last page
TO-254AA
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNA593160PBF | 52 A, 100 V, 0.049 ohm, P-CHANNEL, Si, POWER, MOSFET |
| IRHNA8064 | 75 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRKH105/06AS90 | 164.85 A, 600 V, SCR, TO-240AA |
| IRKH105/04APBF | 164.85 A, 400 V, SCR, TO-240AA |
| IRKH105/04AS90PBF | 164.85 A, 400 V, SCR, TO-240AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM8160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM8160D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM8160U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM8230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM8230D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254VAR |
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