- 您现在的位置：买卖IC网 > PDF目录175867 > IRHM8150UPBF 34 A, 100 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA PDF资料下载
参数资料
| 型号： | IRHM8150UPBF |
| 元件分类： | JFETs |
| 英文描述： | 34 A, 100 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 444K |
| 代理商： | IRHM8150UPBF |
www.irf.com
3
Pre-Irradiation
IRHM7150
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100KRads(Si)
300 to 1000K Rads (Si)
U
UU
UUnits
nits
Test Conditions
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
100
100
V
VGS = 0V, ID = 1.0mA
V/5JD
Gate Threshold Voltage#
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
100
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
25
50
A
VDS=80V, VGS =0V
RDS(on)
Static Drain-to-Source#
0.065
0.09
VGS = 12V, ID =21A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source#
0.065
0.09
VGS = 12V, ID =21A
On-State Resistance (TO-254AA)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHM7150 (JANSR2N7268)
2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)
Fig a.
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage#
1.4
1.4
V
VGS = 0V, IS = 34A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Ion
LET
Ion
LET
Ion
LET
Ion
LET
Energy Range
VDS(V)
MeV/(mg/cm )) (MeV)
(m) @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V
@VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V
Cu
28
285
43
100
80
60
Br
36.8
305
39
100
90
70
50
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
VDS
Cu
Br
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNA593160PBF | 52 A, 100 V, 0.049 ohm, P-CHANNEL, Si, POWER, MOSFET |
| IRHNA8064 | 75 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRKH105/06AS90 | 164.85 A, 600 V, SCR, TO-240AA |
| IRKH105/04APBF | 164.85 A, 400 V, SCR, TO-240AA |
| IRKH105/04AS90PBF | 164.85 A, 400 V, SCR, TO-240AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM8160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM8160D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM8160U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM8230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM8230D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254VAR |
发布紧急采购，3分钟左右您将得到回复。