参数资料
型号: IRHM8150UPBF
元件分类: JFETs
英文描述: 34 A, 100 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
封装: HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
文件页数: 4/12页
文件大小: 444K
代理商: IRHM8150UPBF
12
www.irf.com
IRHM7150
Pre-Irradiation
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with V
Total Dose Irradiation with VGS
GS
GS Bias.
Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with V
Total Dose Irradiation with VDS
DS
DS Bias.
Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 0.86mH
Peak IL = 26A, VGS = 12V
ISD ≤ 26A, di/dt ≤ 190A/s,
VDD ≤ 100V, TJ ≤ 150°C
Case Outline and Dimensions TO-254AA
Foot Notes:
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
3.78 ( .149 )
3.53 ( .139 )
-A-
13.84 ( .545 )
13.59 ( .535 )
6.60 ( .260 )
6.32 ( .249 )
20.32 ( .800 )
20.07 ( .790 )
13.84 ( .545 )
13.59 ( .535 )
-C-
1.14 ( .045 )
0.89 ( .035 )
3.81 ( .150 )
1.27 ( .050 )
1.02 ( .040 )
-B-
.12 ( .005 )
3X
2X
3.81 ( .150 )
1
2
3
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
30.39 ( 1.199 )
.50 ( .020 )
M C A M B
.25 ( .010 )
M C
LEGEND
1 - COLL
2 - EMIT
3 - GATE
IRHM57163SED
IRHM57163SEU
LEGEND
1- DRAIN
2- SOURCE
3- GATE
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TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 08/01
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