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参数资料
| 型号： | IRHM8150UPBF |
| 元件分类： | JFETs |
| 英文描述： | 34 A, 100 V, 0.076 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 444K |
| 代理商： | IRHM8150UPBF |
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IRHM7150
Pre-Irradiation
Electrical Characteristics
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Typ Max
Max
Max Units
Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS =0 V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
0.13
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
0.065
VGS = 12V, ID = 21A
On-State Resistance
0.076
VGS = 12V, ID = 34A
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
8.0
S ( )VDS > 15V, IDS = 21A "
IDSS
Zero Gate Voltage Drain Current
25
VDS= 80V,VGS=0V
250
VDS = 80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
160
VGS = 12V, ID = 34A
Qgs
Gate-to-Source Charge
35
nC
VDS = 50V
Qgd
Gate-to-Drain (Miller) Charge
65
td(on)
Turn-On Delay Time
45
VDD = 50V, ID = 14A,
tr
Rise Time
190
VGS = 12V, RG = 2.35
td(off)
Turn-Off Delay Time
170
tf
Fall Time
130
LS + LD
Total Inductance
6.8
Ciss
Input Capacitance
4300
VGS = 0V, VDS = 25V
Coss
Output Capacitance
1200
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
200
nA
"
nH
ns
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min
Min Typ
Typ
Typ Max
Max
Max Units
Units
Test Conditions
RthJC
Junction-to-Case
0.83
RthCS
Case-to-sink
0.21
RthJA
Junction-to-Ambient
48
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min
Min Typ
Typ
Typ Max
Max
Max Units
Units
Test Conditions
IS
Continuous Source Current (Body Diode)
34
ISM
Pulse Source Current (Body Diode)
136
VSD Diode Forward Voltage
1.4
V
Tj = 25°C, IS = 34A, VGS = 0V
trr
Reverse Recovery Time
570
nS
Tj = 25°C, IF = 34A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
5.8
C
VDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM8160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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| IRHM8160U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 35A I(D) | TO-254VAR |
| IRHM8230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM8230D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9A I(D) | TO-254VAR |
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