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参数资料
| 型号： | IRGS15B60KDTRR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 31 A, 600 V, N-CHANNEL IGBT |
| 封装： | PLASTIC, D2PAK-3 |
| 文件页数： | 9/16页 |
| 文件大小： | 824K |
| 代理商： | IRGS15B60KDTRR |
IRGB/S/SL15B60KDPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600 –––
–––
V
VGE = 0V, IC = 500A
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
–––
0.3
––– V/°C
VGE = 0V, IC = 1.0mA, (25°C-150°C)
VCE(on)
Collector-to-Emitter Saturation Voltage
1.5 1.80 2.20
IC = 15A, VGE = 15V
––– 2.05 2.50
V
IC = 15A, VGE = 15V
TJ = 125°C
––– 2.10 2.60
IC = 15A, VGE = 15V
TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.5
4.5
5.5
V
VCE = VGE, IC = 250A
VGE(th)/TJ Temperature Coeff. of Threshold Voltage –––
-10
––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C)
gfe
Forward Transconductance
––– 10.6 –––
S
VCE = 50V, IC = 20A, PW=80s
ICES
Zero Gate Voltage Collector Current
–––
5.0
150
A
VGE = 0V, VCE = 600V
––– 500 1000
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
Diode Forward Voltage Drop
––– 1.20 1.45
IC = 15A
––– 1.20 1.45
V
IC = 15A
TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig.
5, 6,7
9, 10,11
12
9, 10,11
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
–––
56
84
IC = 15A
Qge
Gate - Emitter Charge (turn-on)
–––
7.0
10
nC
VCC = 400V
Qgc
Gate - Collector Charge (turn-on)
–––
26
39
VGE = 15V
Eon
Turn-On Switching Loss
––– 220
330
J
IC = 15A, VCC = 400V
Eoff
Turn-Off Switching Loss
––– 340
455
VGE = 15V,RG = 22, L = 200H
Etot
Total Switching Loss
––– 560
785
Ls = 150nH
TJ = 25°C
td(on)
Turn-On Delay Time
–––
34
44
IC = 15A, VCC = 400V
tr
Rise Time
–––
16
22
VGE = 15V, RG = 22, L = 200H
td(off)
Turn-Off Delay Time
––– 184
200
ns
Ls = 150nH, TJ = 25°C
tf
Fall Time
–––
20
26
Eon
Turn-On Switching Loss
––– 355
470
IC = 15A, VCC = 400V
Eoff
Turn-Off Switching Loss
––– 490
600
J
VGE = 15V,RG = 22, L = 200H
Etot
Total Switching Loss
––– 835 1070
Ls = 150nH
TJ = 150°C
td(on)
Turn-On Delay Time
–––
34
44
IC = 15A, VCC = 400V
tr
Rise Time
–––
18
25
VGE = 15V, RG = 22, L = 200H
td(off)
Turn-Off Delay Time
––– 203
226
ns
Ls = 150nH, TJ = 150°C
tf
Fall Time
–––
28
36
Cies
Input Capacitance
––– 850
–––
VGE = 0V
Coes
Output Capacitance
–––
75
–––
pF
VCC = 30V
Cres
Reverse Transfer Capacitance
–––
35
–––
f = 1.0MHz
TJ = 150°C, IC = 62A, Vp =600V
VCC = 500V, VGE = +15V to 0V,
s
TJ = 150°C, Vp =600V,RG = 22
VCC = 360V, VGE = +15V to 0V
Erec
Reverse Recovery energy of the diode
––– 540
720
J
TJ = 150°C
trr
Diode Reverse Recovery time
–––
92
111
ns
VCC = 400V, IF = 15A, L = 200H
Irr
Diode Peak Reverse Recovery Current
–––
29
33
A
VGE = 15V,RG = 22, Ls = 150nH
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
RBSOA
Reverse Bias Safe Operting Area
FULL SQUARE
SCSOA
Short Circuit Safe Operting Area
10
–––
Ref.Fig.
CT1
CT4
13,15
WF1WF2
4
CT2
CT3
WF4
17,18,19
20,21
CT4,WF3
CT4
RG = 22
14, 16
CT4
WF1
WF2
Note to are on page 15
8
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