- 您现在的位置：买卖IC网 > PDF目录296249 > IS45VS16160D-8BLA2 (INTEGRATED SILICON SOLUTION INC) 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 PDF资料下载
参数资料
| 型号： | IS45VS16160D-8BLA2 |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封装： | 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54 |
| 文件页数： | 4/61页 |
| 文件大小： | 939K |
| 代理商： | IS45VS16160D-8BLA2 |
第1页第2页第3页当前第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页
12
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
Current State
CS
RAS CAS
WE
Address
Command
Action
WriteRecovering
H
×
DESL
Nop,EnterrowactiveaftertDPL
L
H
×
NOP
Nop,EnterrowactiveaftertDPL
L
H
L
×
BST
Nop,EnterrowactiveaftertDPL
L
H
L
H
BA,CA,A10
READ/READA
Beginread(8)
L
H
L
BA,CA,A10
WRIT/WRITA
Beginnewwrite
L
H
BA,RA
ACT
ILLEGAL(3)
L
H
L
BA,A10
PRE/PALL
ILLEGAL(3)
L
H
×
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
WriteRecovering
H
×
DESL
Nop,EnterprechargeaftertDPL
withAuto
L
H
×
NOP
Nop,EnterprechargeaftertDPL
Precharge
L
H
L
×
BST
Nop,EnterrowactiveaftertDPL
L
H
L
H
BA,CA,A10
READ/READA
ILLEGAL(3,8,11)
L
H
L
BA,CA,A10
WRIT/WRITA
ILLEGAL(3,11)
L
H
BA,RA
ACT
ILLEGAL(3,11)
L
H
L
BA,A10
PRE/PALL
ILLEGAL(3,11)
L
H
×
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
Refresh
H
×
DESL
Nop,EnteridleaftertRC
L
H
×
NOP/BST
Nop,EnteridleaftertRC
L
H
L
H
BA,CA,A10
READ/READA
ILLEGAL
L
H
L
BA,CA,A10
WRIT/WRITA
ILLEGAL
L
H
BA,RA
ACT
ILLEGAL
L
H
L
BA,A10
PRE/PALL
ILLEGAL
L
H
×
REF/SELF
ILLEGAL
L
OC,BA
MRS
ILLEGAL
ModeRegister
H
×
DESL
Nop,Enteridleafter2clocks
Accessing
L
H
×
NOP
Nop,Enteridleafter2clocks
L
H
L
×
BST
ILLEGAL
L
H
L
×
BA,CA,A10
READ/WRITE
ILLEGAL
L
×
BA,RA
ACT/PRE/PALL ILLEGAL
REF/MRS
FUNCTIONAL TRUTH TABLE Continued:
Note:H=Vih,L=Vilx=VihorVil,V=ValidData,BA=BankAddress,CA+ColumnAddress,RA=RowAddress,OC=Op-Code
Notes:
1.AllentriesassumethatCKEisactive(CKEn-1=CKEn=H).
2.Ifbothbanksareidle,andCKEisinactive(Low),thedevicewillenterPowerDownmode.AllinputbuffersexceptCKEwillbe
disabled.
3.Illegaltobankinspecifiedstates;FunctionmaybelegalinthebankindicatedbyBankAddress(BA),dependingonthestateof
that bank.
4.Ifbothbanksareidle,andCKEisinactive(Low),thedevicewillenterSelf-Refreshmode.AllinputbuffersexceptCKEwillbe
disabled.
5.IllegaliftRCDisnotsatisfied.
6.IllegaliftRASisnotsatisfied.
7.Mustsatisfyburstinterruptcondition.
8.Mustsatisfybuscontention,busturnaround,and/orwriterecoveryrequirements.
9.Mustmaskprecedingdatawhichdon’tsatisfytDPL.
10.IllegaliftRRDisnotsatisfied.
11. Illegal for single bank, but legal for other banks.
相关PDF资料 |
PDF描述 |
|---|---|
| IS43R32800B-5BL | 8M X 32 DDR DRAM, 0.7 ns, PBGA144 |
| IS61C512-25TI | x8 SRAM |
| IS61C512-35J | x8 SRAM |
| IS61C512-35JI | x8 SRAM |
| IS61C512-35K | x8 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IS4600 | 制造商:Isocom Components 功能描述:. |
| IS46D | 制造商:IDEC Corporation 功能描述:Sensor inductive 18mm PNP |
| IS46DK | 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC PNP NO NC |
| IS46DR16128-3DBLA1 | 功能描述:动态随机存取存储器 Automotive 2G,1.8V DDR2,128Mx16,333Mhz RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube |
| IS46DR16128-3DBLA1-TR | 功能描述:动态随机存取存储器 Automotive,2G,1.8V DDR2,128Mx16,333Mhz RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。