参数资料
型号: IS45VS16160D-8BLA2
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封装: 13 X 8 MM, 0.80 MM PITCH, LEAD FREE, MS-207, BGA-54
文件页数: 7/61页
文件大小: 939K
代理商: IS45VS16160D-8BLA2
Integrated Silicon Solution, Inc. — www.issi.com
15
Rev. 00A
04/21/09
IS42VS83200D, IS42VS16160D
IS45VS83200D, IS45VS16160D
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
Vdd max
MaximumSupplyVoltage
–0.35to+2.6
V
Vddq max
MaximumSupplyVoltageforOutputBuffer
–0.35to+2.6
V
Vin
InputVoltage
–0.35toVdd+0.5
V
Vout
OutputVoltage
–0.35toVddq+0.5
V
Pd max
AllowablePowerDissipation
1
W
Ics
outputShortedCurrent
50
mA
Topr
operatingTemperature
Com.
0 to +70
°C
Ind./A1
–40to+85
A2
–40to+105
Tstg
StorageTemperature
–65to+150
°C
DC RECOMMENDED OPERATING CONDITIONS
(Ta=0oC to +70oCforCommercialgrade.Ta=-40oCto+85oCforIndustrialandA1grade.Ta=-40oCto+105oCforA2grade.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Vdd
SupplyVoltage
1.7
1.8
1.95
V
Vddq
I/OSupplyVoltage
1.7
1.8
1.95
V
Vih(1)
InputHighVoltage
0.8xVddq
Vddq +0.3
V
Vil(2)
InputLowVoltage
-0.3
+0.3
V
CAPACITANCE CHARACTERISTICS (AtTa=0to+25°C,Vdd=Vddq =1.8±0.1V)
Symbol
Parameter
Min.
Max.
Unit
Cin1
InputCapacitance:CLK
2.5
3.5
pF
Cin2
InputCapacitance:Allotherinputpins
2.5
3.8
pF
CI/O
DataInput/OutputCapacitance:DQS
4.0
6.0
pF
Note:
1.Vih (overshoot): Vih (max)=Vddq +1.2V (pulse width < 3ns).
2.Vil (undershoot): Vih (min)=-1.2V (pulse width < 3ns).
3. AllvoltagesarereferencedtoVss.
Notes:
1. StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamageto
thedevice.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditions
abovethoseindicatedintheoperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolute
maximumratingconditionsforextendedperiodsmayaffectreliability.
2. AllvoltagesarereferencedtoVss.
相关PDF资料
PDF描述
IS43R32800B-5BL 8M X 32 DDR DRAM, 0.7 ns, PBGA144
IS61C512-25TI x8 SRAM
IS61C512-35J x8 SRAM
IS61C512-35JI x8 SRAM
IS61C512-35K x8 SRAM
相关代理商/技术参数
参数描述
IS4600 制造商:Isocom Components 功能描述:.
IS46D 制造商:IDEC Corporation 功能描述:Sensor inductive 18mm PNP
IS46DK 制造商:IDEC Corporation 功能描述:SENS.IND. 10-30VDC PNP NO NC
IS46DR16128-3DBLA1 功能描述:动态随机存取存储器 Automotive 2G,1.8V DDR2,128Mx16,333Mhz RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube
IS46DR16128-3DBLA1-TR 功能描述:动态随机存取存储器 Automotive,2G,1.8V DDR2,128Mx16,333Mhz RoHS:否 制造商:ISSI 数据总线宽度:16 bit 组织:1 M x 16 封装 / 箱体:SOJ-42 存储容量:16 MB 最大时钟频率: 访问时间:50 ns 电源电压-最大:7 V 电源电压-最小:- 1 V 最大工作电流:90 mA 最大工作温度:+ 85 C 封装:Tube