参数资料
型号: IS61DDB22M18
厂商: Integrated Silicon Solution, Inc.
英文描述: 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs
中文描述: 36字节(100万× 36
文件页数: 12/25页
文件大小: 421K
代理商: IS61DDB22M18
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
2/22/05
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 2) CIO Synchronous SRAMs
Capacitance
(T
A
= 0 to +
70°
C, V
DD
= 1.8V -5%, +5%, f = 1MHz)
Parameter
Symbol
Test Condition
Maximum
Units
Input capacitance
C
IN
V
IN
= 0V
4
pF
Data-in/Out capacitance (DQ0–DQ35)
C
DQ
V
DIN
= 0V
4
pF
Clocks Capacitance (K, K, C, C)
C
CLK
V
CLK
= 0V
4
pF
DC Electrical Characteristics
(T
A
= 0 to +
70
C, V
DD
= 1.8V -5%, +5%)
Parameter
Symbol
Minimum
Maximum
Units
Notes
x36 average power supply operating current
(I
OUT
= 0, V
IN
= V
IH
or V
IL
)
I
DD30
I
DD40
I
DD50
I
DD30
I
DD40
I
DD50
m
A
1, 3
x18 average power supply operating current
(I
OUT
= 0, V
IN
= V
IH
or V
IL
)
m
A
1, 3
Power supply standby current
(R = V
IH
, W = V
IH
. All other inputs = V
IH
or V
IH
, I
IH
= 0)
I
SBSS
mA
1
Input leakage current, any input (except JTAG)
(V
IN
= V
SS
or V
DD
)
I
LI
-2
+2
uA
Output leakage current
(V
OUT
= V
SS
or V
DDQ
, Q in High-Z)
I
LO
-5
+5
uA
Output “high” level voltage (I
OH
= -6mA)
V
OH
V
DDQ
-.4
V
DDQ
V
Output “low” level voltage (I
OL
= +6mA)
V
OL
V
SS
V
SS
+.4
V
2, 4
JTAG leakage current
(V
IN
= V
SS
or V
DD
)
I
LIJTAG
-100
+100
uA
1. I
OUT
= chip output current.
2. Minimum impedance output driver.
3. The numeric suffix indicates the part operating at speed, as indicated in
AC Characteristics
on page
15
(that is, I
DD25
indicates
2.5ns cycle time).
4. JEDEC Standard JESD8-6 Class 1 compatible.
5. For JTAG inputs only.
6. Currents are estimates only and need to be verified.
2, 4
5
200
600
550
500
600
550
500
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