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参数资料
| 型号： | IS61DDB22M18 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
| 中文描述： | 36字节（100万× 36 |
| 文件页数： | 9/25页 |
| 文件大小： | 421K |
| 代理商： | IS61DDB22M18 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
2/22/05
9
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 2) CIO Synchronous SRAMs
X36 Write Truth Table
Use the following table with the
Timing Reference Diagram for Truth Table
on
page
8
.
Operation
K
(t
w
)
K
(t
w
+ 0.5)
BW
0
BW
1
BW
2
BW
3
D
B
D
B+1
Write Byte 0
L
→
L
H
H
H
D0-8 (t
w
+ 1)
Write Byte 1
L
→
H
H
L
H
H
D9-17 (t
w
+ 1)
Write Byte 2
L
→
H
H
H
L
H
D18-26 (t
w
+ 1)
Write Byte 3
L
→
H
H
H
H
L
D27-35 (t
w
+ 1)
Write All Bytes
L
→
H
L
L
L
L
D0-35 (t
w
+ 1)
Abort Write
L
→
H
H
H
H
H
Don’t care
Write Byte 0
L
→
H
L
H
H
H
D0-8 (t
w
+ 1.5)
Write Byte 1
L
→
H
H
L
H
H
D9-17 (t
w+1.5
)
Write Byte 2
L
→
H
H
H
L
H
D18-26 (t
w+1.5
)
Write Byte 3
L
→
H
H
H
H
L
D27-35 (t
w+1.5
)
Write All Bytes
L
→
H
L
L
L
L
D0-35 (t
w+1.5
)
Abort Write
L
→
H
H
H
H
H
Don’t care
Notes
;
1. For all cases. R/W must be active low during the rising edge of K occurring at time t
W
.
2. For timing definitions, refer to the
AC Characteristics
on page
15
. Signals must have AC specifications with respect to switching
clocks K and K.
X18 Write Truth Table
(Use this table with the
Timing Reference Diagram for Truth Table
on page
8
.)
Operation
K
(t
w
)
K
(t
w+0.5
)
BW
0
BW
1
D
B
D
B+1
Write Byte 0 on B
L
→
H
L
H
D0-8 (t
w
+ 1)
Write Byte 1 on B
L
→
H
H
L
D9–17 (t
w
+ 1)
Write All Bytes on B
L
→
H
L
L
D0–17 (t
w
+ 1)
Abort Write on B
L
→
H
H
H
Don’t care
Write Byte 1 on B+1
L
→
H
L
H
D0–8 (t
w
+ 1.5)
Write Byte 2 on B+1
L
→
H
H
L
D9–17 (t
w
+ 1.5)
Write All Bytes on B+1
L
→
H
L
L
D0–17 (t
w
+ 1.5)
Abort Write on B+1
L
→
H
H
H
Don’t care
Notes
;
1. Refer to
Timing Reference Diagram for Truth Table
on page
8
. Cycle time starts at n and is referenced to the K clock.
2. For all cases, R/W must be active low during the rising edge of K occurring at t
w
.
3. For timing definitions, refer to the
AC Characteristics
on page
15
. Signals must have AC specs with respect to switching clocks K
and K.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB22M18-250M3 | 功能描述:静态随机存取存储器 36Mb 2Mbx18 DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18A-250B4LI | 功能描述:静态随机存取存储器 36Mb, DDR II CIO Sync 静态随机存取存储器, 2M x 18 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M36 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
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