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参数资料
| 型号： | IS61DDB22M18 |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 36 Mb (1M x 36 & 2M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
| 中文描述： | 36字节（100万× 36 |
| 文件页数： | 8/25页 |
| 文件大小： | 421K |
| 代理商： | IS61DDB22M18 |
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
2/22/05
ISSI
36 Mb (1M x 36 & 2M x 18)
DDR-II (Burst of 2) CIO Synchronous SRAMs
Timing Reference Diagram for Truth Table
Clock Truth Table
(Use the following table with the
Timing Reference Diagram for Truth Table
.)
Mode
Clock
Controls
Data-Out/Data-In
K
LD
R/W
Q
A
/ D
B
Q
A+1
/ D
B+1
Stop Clock
Stop
X
X
Previous state
Previous state
No Operation (NOP)
L
→
H
H
H
High-Z
High-Z
Read A
L
→
H
L
X
D out at C (t + 1.5)
D out at C (t + 2)
Write B
L
→
H
X
L
D
B
(t
W
+ 1)
D
B
(t
W
+ 1.5)
Notes
:
1. The internal burst counter is always fixed as two-bit.
2. X = don’t care; H = logic “1”; L = logic “0”.
3. A read operation is started when control signal R/W is active high.
4. A write operation is started when control signal R/W is active low.
5. Before entering into the stop clock, all pending read and write commands must be completed.
6. For timing definitions, refer to the
AC Characteristics
on page
15
. Signals must have AC specifications at timings indicated in
parenthesis with respect to switching clocks K, K, C, and C.
t
t+1
t+2
t
w
Write B
NOP
A
QA
QA+1
K Clock
K Clock
LD
R / W
BW 0,1,2,3
Address
Data-In/
C Clock
C Clock
CQ Clock
CQ Clock
Cycle
t
w+1
DB
DB+1
NOP
Read A
B
Data-Out (DQ)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IS61DDB22M18-250M3 | 功能描述:静态随机存取存储器 36Mb 2Mbx18 DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18-250M3L | 功能描述:静态随机存取存储器 36M (2Mx18) 250ns DDR II Sync 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18A-250B4LI | 功能描述:静态随机存取存储器 36Mb, DDR II CIO Sync 静态随机存取存储器, 2M x 18 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M18A-250M3L | 功能描述:静态随机存取存储器 36Mb 2Mx18 165ball RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| IS61DDB22M36 | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:72 Mb (2M x 36 & 4M x 18) DDR-II (Burst of 2) CIO Synchronous SRAMs |
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