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参数资料
| 型号： | MBM29LV160BE12PBT-E1 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 2M X 8 FLASH 3V PROM, 120 ns, PBGA48 |
| 封装： | PLASTIC, FBGA-48 |
| 文件页数： | 23/59页 |
| 文件大小： | 759K |
| 代理商： | MBM29LV160BE12PBT-E1 |
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MBM29LV160TE/BE-70/90/12
3
s GENERAL DESCRIPTION
The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M
words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0
V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in
standard EPROM programmers.
The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-
speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable
(CE), write enable (WE), and output enable (OE) controls.
The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are
written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the device is
similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the device automatically times the erase pulse widths and
verifies proper cell margins.
Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.
The device features single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been
comleted, the device internally resets to the read mode.
The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any
Embedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then
reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset
occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically
reset to the read mode and will have erroneous data stored in the address locations being programmed or
erased. These locations need re-writing after the Reset. Resetting the device enables the system’s
microprocessor to read the boot-up firmware from the Flash memory.
Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
at a time using the EPROM programming mechanism of hot electron injection.
相关PDF资料 |
PDF描述 |
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| MBM29LV200B-10PFTR | 256K X 8 FLASH 3V PROM, 100 ns, PDSO48 |
| MBM29LV800BE70TN | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| MBPL1319B-1R2-KS | 1 ELEMENT, 1.2 uH, GENERAL PURPOSE INDUCTOR |
| MBPL1319B-R30-KS | 1 ELEMENT, 0.3 uH, GENERAL PURPOSE INDUCTOR |
| MBPL1319B-R90-KS | 1 ELEMENT, 0.9 uH, GENERAL PURPOSE INDUCTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM29LV160BE12PCV | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29LV160BE12TN | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29LV160BE12TR | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29LV160BE-70 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
| MBM29LV160BE70PBT | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT |
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