参数资料
型号: MBM29LV160BE12PBT-E1
厂商: SPANSION LLC
元件分类: PROM
英文描述: 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
封装: PLASTIC, FBGA-48
文件页数: 9/59页
文件大小: 759K
代理商: MBM29LV160BE12PBT-E1
MBM29LV160TE/BE-70/90/12
17
Notes: 1. Address bits A11 to A19 = X = “H” or “L” for all address commands except or Program Address (PA) and
Sector Address (SA).
2. Bus operations are defined in Tables 2 and 3.
3. RA =Address of the memory location to be read.
PA =Address of the memory location to be programmed. Addresses are latched on the falling edge of
the WE pulse.
SA =Address of the sector to be erased. The combination of A19, A18, A17, A16, A15, A14, A13, and A12 will
uniquely select any sector.
4. RD =Data read from location RA during read operation.
PD =Data to be programmed at location PA. Data is latched on the rising edge of WE.
5. SPA =Sector address to be protected. Set sector address (SA) and (A6, A1, A0) = (0, 1, 0).
SD =Sector protection verify data. Output 01H at protected sector addressed and output 00H at
unprotected sector addresses.
6. The system should generate the following address patterns:
Word Mode: 555H or 2AAH to addresses A0 to A10
Byte Mode: AAAH or 555H to addresses A-1 to A10
7. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
*1: This command is valid while Fast Mode.
*2: This command is valid while RESET = VID.
*3: The valid addresses are A6 to A0. The other addresses are “Don’t care”.
*4: The data “00H” is also acceptable.
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