参数资料
型号: MBM29LV160BE12PBT-E1
厂商: SPANSION LLC
元件分类: PROM
英文描述: 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
封装: PLASTIC, FBGA-48
文件页数: 24/59页
文件大小: 759K
代理商: MBM29LV160BE12PBT-E1
MBM29LV160TE/BE-70/90/12
30
2.
AC Characteristics
Read Only Operations Characteristics
Note : Test Conditions:
Output Load:1 TTL gate and 30 pF (MBM29LV160TD/BD-70)
1 TTL gate and 100 pF (MBM29LV160TD/BD-90/12)
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level
Input: 1.5 V
Output:1.5 V
Parameter
Symbols
Description
Test Setup
70
(Note)
90
(Note)
12
(Note)
Unit
JEDEC
Standard
tAVAV
tRC
Read Cycle Time
Min.
70
90
120
ns
tAVQV
tACC
Address to Output Delay
CE = VIL
OE = VIL
Max.
70
90
120
ns
tELQV
tCE
Chip Enable to Output Delay
OE = VIL
Max.
70
90
120
ns
tGLQV
tOE
Output Enable to Output Delay
Max.
30
35
50
ns
tEHQZ
tDF
Chip Enable to Output HIGH-Z
Max.
25
30
ns
tGHQZ
tDF
Output Enable to Output HIGH-Z
Max.
25
30
ns
tAXQX
tOH
Output Hold Time From Address,
CE or OE, Whichever Occurs First
—Min.
0
ns
—tREADY
RESET Pin Low to Read Mode
Max.
20
s
tELFL
tELFH
CE or BYTE Switching Low or High
Max.
5
ns
Figure 4 Test Conditions
CL
3.3 V
Diodes = IN3064
or Equivalent
2.7 k
Device
Under
Test
IN3064
or Equivalent
6.2 k
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