参数资料
型号: MC33910G5AC
厂商: Freescale Semiconductor
文件页数: 14/90页
文件大小: 0K
描述: IC SYSTEM BASIS CHIP 32LQFP
标准包装: 250
应用: 系统基础芯片
电流 - 电源: 4.5mA
电源电压: 5.5 V ~ 27 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 32-LQFP
供应商设备封装: 32-LQFP(7x7)
包装: 托盘
MC33910G5AC/MC3433910G5AC
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V ≤ V SUP ≤ 18 V, -40°C ≤ T A ≤ 125°C for the 33910 and -40°C ≤ T A ≤ 85°C for the
34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at T A = 25°C under nominal
conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
TXD INPUT PIN (LIN PHYSICAL LAYER) (TXD)
Low-state Input Voltage
High-state Input Voltage
Pin Pull-up Current, 0 V < V IN < 3.5 V
V IL
V IH
I PUIN
-0.3
0.7 x V DD
10
20
0.3 x V DD
V DD +0.3
30
V
V
μA
LIN PHYSICAL LAYER WITH J2602 FEATURE ENABLED (BIT DIS_J2602 = 0)
LIN Under Voltage threshold
V TH_UNDER_
V
Positive and Negative threshold (V THP , V THN )
Hysteresis (V THP - V THN )
(LIN) (37)
LIN PHYSICAL LAYER, TRANSCEIVER
VOLTAGE
V J2602_DEG
5.0
400
6.0
mV
Operating Voltage Range
Supply Voltage Range
Voltage Range within which the device is not destroyed
Current Limitation for Driver Dominant State
Driver ON, V BUS = 18 V
V BAT
V SUP
V SUP_NON_OP
I BUS_LIM
8.0
7.0
-0.3
40
90
18
18
40
200
V
V
V
mA
Input Leakage Current at the receiver
I BUS_PAS_DOM
Driver off; V BUS = 0 V; V BAT = 12 V
Leakage Output Current to GND
Driver Off; 8.0 V < V BAT < 18 V; 8.0 V < V BUS < 18 V; V BUS ≥ V BAT
Control unit disconnected from ground (38)
GND DEVICE = V SUP ; V BAT = 12 V; 0 < V BUS < 18 V
V BAT Disconnected; V SUP_DEVICE = GND; 0 V < V BUS < 18
Receiver Dominant State
Receiver Recessive State
Receiver Threshold Center
(V TH_DOM + V TH_REC )/2
Receiver Threshold Hysteresis
(V TH_REC - V TH_DOM )
I BUS_PAS_REC
I BUS_NO_GND
I BUSNO_BAT
V BUSDOM
V BUSREC
V BUS_CNT
V HYS
-1.0
-1.0
0.6
0.475
0.5
20
1.0
100
0.4
0.525
0.175
mA
μA
mA
μA
V SUP
V SUP
V SUP
V SUP
Voltage Drop at the serial Diode in pull-up path
VBAT_SHIFT
GND_SHIFT
V SERDIODE
V SHIFT_BAT
V SHIFT_GND
0.4
0
0
1.0
11.5%
11.5%
V
V BAT
V BAT
Notes
37. Parameters guaranteed for 7.0 V ≤ V SUP ≤ 18 V.
38.
39.
Loss of local ground must not affect communication in the residual network.
Node has to sustain the current that can flow under this condition. Bus must remain operational under this condition.
33910
Analog Integrated Circuit Device Data
14
Freescale Semiconductor
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