参数资料
| 型号： | MC34703PNB |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/46页 |
| 文件大小： | 0K |
| 描述： | IC POWER SUPPLY QUICC 33-QFN |
| 标准包装： | 1 |
| 应用： | 电源 |
| 电流 - 电源： | 60mA |
| 电源电压： | 2.8 V ~ 13.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 33-PowerQFN |
| 供应商设备封装： | 33-PQFN（10x10） |
| 包装： | 管件 |
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions -40°C ≤ T J ≤ 85 ° C unless otherwise noted. Input voltages 2.8 V ≤ V IN ≤ 13.5 V. Typical
values noted reflect the approximate parameter means at T A = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
LINEAR REGULATOR (LDO, ISNS, LDRV, LFB) (17)
LDO Output Voltage Range (17)
V LDO
V
V IN1 = V IN2 = 2.8 V to 13.5 V, I LDO = 100 mA to 2000 mA
LDO Feedback Voltage, LFB Pin Connected to LDO Pin
V LDO
0.8
–
4.5
V
V IN1 = V IN2 = 2.8 V to 13.5 V, I LDO = 100 mA to 2000 mA. Includes
Load Regulation Error
0.784
0.8
0.816
LDO Voltage Margining Step Size
V MLDO
–
1.0
–
%
LDO Line Regulation
REG LNVLDO
%
V IN1 = V IN2 = 2.8 V to 13.5 V, I LDO = 1000 mA
LDO Load Regulation
I LDO = 100 mA to 2000 mA
LDO Ripple Rejection, Dropout Voltage V DO = 1.0 V,
V RIPPLE = +1.0 V p-p (18)
Sinusoidal, f = 300 kHz, I LDO = 500 mA
REG LDVLDO
V LDORR
-1.0
-1.0
–
–
–
26
1.0
1.0
–
%
dB
LDO Maximum Dropout Voltage (V IN - V LDO )
(18)
V DO
mV
V LDO = 2.5 V, I LDO = 2000 mA
–
50
–
LDO Current Sense Comparator Threshold Voltage (V CS - V LDO )
LDO Pin Input Current
LDO Feedback Input Current (LFB Pin)
LDO Drive Output Current (LDRV Pin)
V CSTH
I LDO
I LFB
I LDRV
35
1.0
-1.0
2.0
45
2.0
0.04
4.0
65
4.0
1.0
5.0
mV
mA
μ A
mA
LDO Drive Current Limit (LDRV Pin)
(18)
I DRLIM
–
3.6
–
mA
ISNS Pin Input Leakage Current
I SNSLK
μ A
V ISNS = 5.0 V
50
125.0
200
LDO Error Amplifier Input Impedance (LFB Pin) (18)
R IN
–
10
–
Μ?
LDO Error Amplifier Output Impedance (LCMP Pin)
(18)
R OUT
–
60
–
?
LDO Internal Pull-Down MOSFET Current Limit
I Q4LIM
A
T A = 25°C, V BST = 8.0 V (LDO Pin)
LDO Internal Pull-Down MOSFET R DS(ON)
I D = 1.0 A, T A = 25°C, V BST = 8.0 V
Q4 R DS(ON)
0.75
–
1.7
–
2.0
3.2
?
LDO Recommended Output Capacitance
LDO Recommended Output Capacitor ESR
C LDO
ESR CLDO
–
–
10
100
–
–
μ F
m ?
Thermal Shutdown (LDO Pull-Down FET Q4)
(19)
T SD
150
170
190
°C
Thermal Shutdown Hysteresis
(19)
T SDHYS
–
15
–
°C
Soft Start Duration (Power Sequencing Disabled, EN1 = 1, EN2 = 1)
(18)
t SS
–
800
–
μ s
Notes
17. The LDO output range is given for the MOSFET as depicted on Figure 33 . Should the customer select another MOSFET, It is the
customer’s responsibility to properly select the MOSFET given the expected power dissipation, voltage drop across it and any other
constraint that could impact the MOSFET reliability and range of work.
18. Not production tested for typical values specified.
19. Guaranteed by design.
34703
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
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