参数资料
型号: MKI41T56S00TR
厂商: STMICROELECTRONICS
元件分类: 时钟/数据恢复及定时提取
英文描述: 0 TIMER(S), REAL TIME CLOCK, PDSO8
封装: 0.150 INCH, PLASTIC, SOP-8
文件页数: 12/16页
文件大小: 105K
代理商: MKI41T56S00TR
5/16
MK41T56, MKI41T56
Table 5. Capacitance (1, 2)
(TA = 25 °C, f = 1 MHz)
Note: 1. Effective capacitance measured with power supply at 5V.
2. Sampled only, not 100% tested.
3. Outputs deselected.
Table 6. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VCC = 4.5V to 5.5V)
Note: 1. The RAYOVAC BR1225 or equivalent is recommended as the battery supply.
Table 7. Power Down/Up Trip Points DC Characteristics (1)
(TA = 0 to 70°C or –40 to 85°C)
Note: 1. All voltages referenced to VSS.
Table 8. Crystal Electrical Characteristics
(Externally Supplied)
Note: Load capacitors are integrated within the MK41T56. Circuit board layout considerations for the 32.768kHz crystal of minimum trace
lengths and isolation from RF generating signals should be taken into account.
STMicroelectronics recommends the ECS-.327-12.5-8SP-2 quartz crystal is recommended for industrial temperature operations.
ESC Inc. can be contacted at 800-237-1041 or 913-782-7787 for further information on this crystal type.
Symbol
Parameter
Min
Max
Unit
CIN
Input Capacitance (SCL)
7
pF
COUT
(2)
Output Capacitance (SDA, FT/OUT)
10
pF
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VCC
±10
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VCC
±10
A
ICC1
Supply Current
SCL/SDA = VCC – 0.3V
1mA
ICC2
Supply Current (Stand-by)
1
mA
VIL
Input Low Voltage
–0.3
1.5
V
VIH
Input High Voltage
3VCC + 0.8
V
VOL
Output Low Voltage
IOL = 5mA, VCC = 4.5V
0.4
V
VBAT
(1)
Battery Supply Voltage
2.6
3
3.5
V
IBAT
Battery Supply Current
TA = 25°C, VCC = 0V,
Oscillator ON, VBAT = 3V
450
500
nA
Symbol
Parameter
Min
Typ
Max
Unit
VPFD
Power-fail Deselect Voltage
1.2 VBAT
1.25 VBAT
1.285 VBAT
V
VSO
Battery Back-up Switchover Voltage
VBAT
V
Symbol
Parameter
Min
Typ
Max
Unit
fO
Resonant Frequency
32.768
kHz
RS
Series Resistance
35
k
CL
Load Capacitance
12.5
pF
相关PDF资料
PDF描述
ML2035IP 1-BIT, DSP-NUM CONTROLLED OSCILLATOR, PDIP8
ML54053 IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PQFP120
ML610Q346J-NNNTB 8-BIT, FLASH, 4.2 MHz, RISC MICROCONTROLLER, PQFP64
ML610Q409-NNNTBZ03A RISC MICROCONTROLLER, PQFP100
ML610Q408-NNNTBZ03A RISC MICROCONTROLLER, PQFP100
相关代理商/技术参数
参数描述
MKI50-06A7 功能描述:IGBT 模块 50 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
MKI50-06A7T 功能描述:分立半导体模块 50 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MKI50-12E7 功能描述:分立半导体模块 IGBT (NPT3) 1200V 50A RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MKI50-12F7 功能描述:IGBT 模块 50 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
MKI65-06A7T 功能描述:分立半导体模块 65 Amps 600V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装: