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| 型号： | MRF5S9101NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/20页 |
| 文件大小： | 542K |
| 描述： | MOSFET N-CH 100W 26V TO-270-4 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 700mA |
| 功率 - 输出： | 100W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 标准包装 |
| 其它名称： | MRF5S9101NR1DKR |
AR
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HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead-free
terminations.
MRF5S9101MR1 MRF5S9101MBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier
applications.
GSM Application
?
Typical GSM Performance: VDD
= 26 Volts, I
DQ
= 700 mA, P
out
=
100 Watts CW, Full Frequency Band (869-894 MHz and 921-960 MHz)
Power Gain - 17.5 dB
Drain Efficiency - 60%
GSM EDGE Application
?
Typical GSM EDGE Performance: VDD
= 28 Volts, I
DQ
= 650 mA, P
out
=
50 Watts Avg., Full Frequency Band (869-894 MHz and 921-960 MHz)
Power Gain ? 18 dB
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -78 dBc
EVM ? 2.3% rms
?
Capable of Handling 10:1 VSWR, @ 26 Vdc, @ 100 W CW Output Power,
@ f = 960 MHz
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Internally Matched for Ease of Use
?
Qualified Up to a Maximum of 32 VDD
Operation
?
Integrated ESD Protection
?
200°C Capable Plastic Package
?
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +68
Vdc
Gate-Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC
= 25
°C
Derate above 25°C
PD
427
2.44
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 50 W CW
RθJC
0.41
0.47
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF5S9101
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
869-960 MHz, 100 W, 26 V
GSM/GSM EDGE
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF5S9101MR1
MRF5S9101MBR1
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF5S9101MR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF5S9101MBR1
?
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9150HR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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