参数资料
型号: MRF5S9101NR1
厂商: Freescale Semiconductor
文件页数: 12/20页
文件大小: 542K
描述: MOSFET N-CH 100W 26V TO-270-4
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 1
晶体管类型: LDMOS
频率: 960MHz
增益: 17.5dB
电压 - 测试: 26V
额定电流: 10µA
电流 - 测试: 700mA
功率 - 输出: 100W
电压 - 额定: 68V
封装/外壳: TO-270AB
供应商设备封装: TO-270 WB-4
包装: 标准包装
其它名称: MRF5S9101NR1DKR
AR
C
HIVE INF
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RMATI
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ARCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF5S9101MR1 MRF5S9101MBR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 26 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 400
μAdc)
VGS(th)
2
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS
= 26 Vdc, I
D
= 700 mAdc)
VGS(Q)
?
3.7
?
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2
Adc)
VDS(on)
?
0.21
0.3
Vdc
Forward Transconductance
(VDS
= 10 Vdc, I
D
= 6
Adc)
gfs
?
7
?
S
Dynamic Characteristics (1)
Output Capacitance
(VDS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
70
?
pF
Reverse Transfer Capacitance
(VDS
= 26
Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
2.2
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, P
out
= 100 W, I
DQ
= 700 mA, f = 960 MHz
Power Gain
Gps
16
17.5
19
dB
Drain Efficiency
ηD
56
60
?
%
Input Return Loss
IRL
?
-15
-9
dB
Pout
@ 1 dB Compression Point, CW
P1dB
100
110
?
W
1. Part is internally input matched.
(continued)
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