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参数资料
| 型号： | MRF5S9101NR1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/20页 |
| 文件大小： | 542K |
| 描述： | MOSFET N-CH 100W 26V TO-270-4 |
| 产品变化通告： | RF Devices Discontinuation 01/Jul/2010 |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 960MHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 26V |
| 额定电流： | 10µA |
| 电流 - 测试： | 700mA |
| 功率 - 输出： | 100W |
| 电压 - 额定： | 68V |
| 封装/外壳： | TO-270AB |
| 供应商设备封装： | TO-270 WB-4 |
| 包装： | 标准包装 |
| 其它名称： | MRF5S9101NR1DKR |
16
RF Device Data
Freescale Semiconductor
MRF5S9101MR1 MRF5S9101MBR1
PACKAGE DIMENSIONS
CASE 1486-03
ISSUE C
TO-270 WB-4
PLASTIC
MRF5S9101MR1
H
DATUM
PLANE
BOTTOM VIEW
A1
2X
E3
D1
E1
D3
E4
A2
PIN 5
NOTE 8
A
B
C
DRAIN LEAD
D
C
A
aaa
M
4X
b1
2X
D2
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M?1994.
3. DATUM PLANE ?H? IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS ?D" AND ?E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS ?D" AND ?E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER?
MINED AT DATUM PLANE ?H?.
5. DIMENSION ?b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE ?b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS ?A? AND ?B? TO BE DETERMINED AT
DATUM PLANE ?H?.
7. DIMENSION A2 APPLIES WITHIN ZONE ?J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
c1
F
ZONE J
E2
2X
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.100 .104 2.54 2.64
INCHES
A1
.039 .043 0.99 1.09
A2
.040 .042 1.02 1.07
D
.712 .720 18.08 18.29
D1
.688 .692 17.48 17.58
D2
.011 .019 0.28 0.48
D3
.600 ? ? ? 15.24 ? ? ?
E
.551 .559 14 14.2
E1
.353 .357 8.97 9.07
E2
.132 .140 3.35 3.56
E3
.124 .132 3.15 3.35
E4
.270 ? ? ? 6.86 ? ? ?
F
b1
.164 .170 4.17 4.32
c1
.007 .011 0.18 0.28
e
.025 BSC
.106 BSC
0.64 BSC
2.69 BSC
1
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
aaa
.004 0.10
GATE LEAD
4X
e
2X
E
SEATING
PLANE
4
2
3
NOTE 7
E5
E5
E5
.346 .350 8.79 8.89
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF5S9150HR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR3 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF5S9150HSR5 | 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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