参数资料
型号: MRF5S9101NR1
厂商: Freescale Semiconductor
文件页数: 20/20页
文件大小: 542K
描述: MOSFET N-CH 100W 26V TO-270-4
产品变化通告: RF Devices Discontinuation 01/Jul/2010
标准包装: 1
晶体管类型: LDMOS
频率: 960MHz
增益: 17.5dB
电压 - 测试: 26V
额定电流: 10µA
电流 - 测试: 700mA
功率 - 输出: 100W
电压 - 额定: 68V
封装/外壳: TO-270AB
供应商设备封装: TO-270 WB-4
包装: 标准包装
其它名称: MRF5S9101NR1DKR
AR
C
HIVE INF
O
RMATI
O
N
ARCHIVE INFORMATION
MRF5S9101MR1 MRF5S9101MBR1
9
RF Device Data
Freescale Semiconductor
Figure 14. MRF5S9101MR1(MBR1) 800 MHz Test Circuit Schematic
Z1 0.432″
x 0.827
Microstrip
Z2 0.720″
x 0.788
Microstrip
Z3 0.195″
x 0.087
Microstrip
Z4 0.584″
x 0.087
Microstrip
Z5 0.173″
x 0.087
Microstrip
Z6 0.560″
x 0.087
Microstrip
Z7 0.378″
x 0.827
Microstrip
Z8 0.279″
x 0.087
Microstrip
Z9 0.193″
x 0.087
Microstrip
Z10 0.897″
x 0.087
Microstrip
Z11 1.161″
x 0.087
Microstrip
Z12, Z13* 1.6″
x 0.089
Microstrip
(quarter wave length for supply purpose)
Z14* 1.2″
x 0.059
Microstrip
(quarter wave length for bias purpose)
PCB Taconic TLX8-0300, 0.030″, εr
= 2.55
*Variable for tuning
RF
INPUT
RF
OUTPUT
C1
C10
VSUPPLY
Z6
VBIAS
Z11
C11
C21
+
C7
C19
C8
C2
C5
Z2
C13
C16
C12
Z1
DUT
Z8
R1
C4
R2
Z14
R3
C17
Z12
C9
C3
C6
Z13
C14
C15
C22
Z3
Z5
Z4
C18
C20
Z7
Z10
Z9
Table 7. MRF5S9101MR1(MBR1) 800 MHz Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C3
4.7 F Chip Capacitors (2220)
GRM55ER7H475KA01
Murata
C4, C5, C6
10 nF 200B Chip Capacitors
200B103MW
ATC
C7, C8, C9
33 pF 100B Chip Capacitors
100B330JW
ATC
C10, C11
22 pF 100B Chip Capacitors
100B220GW
ATC
C12, C13, C17
10 pF 100B Chip Capacitors
100B100GW
ATC
C14, C15
8.2 pF 100B Chip Capacitors
100B8R2CW
ATC
C16, C22
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C18
5.6 pF 100B Chip Capacitor
100B5R6CW
ATC
C19, C20
2.7 pF 100B Chip Capacitors
100B2R7BW
ATC
C21
220 F, 50 V Electrolytic Capacitor, Axial
516D227M050NP7B
Sprague
R1, R2
10 k, 1/4 W Chip Resistors (1206)
R3
10 , 1/4 W Chip Resistor (1206)
相关PDF资料
PDF描述
3299W-1-504LF TRIMMER 500K OHM 0.5W TH
MRF5S9101NBR1 MOSFET N-CH 100W 26V TO-272-4
3299Y-1-505LF TRIMMER 5M OHM 0.5W TH
3299Y-1-104LF TRIMMER 100K OHM 0.5W TH
3299Y-1-254LF TRIMMER 250K OHM 0.5W TH
相关代理商/技术参数
参数描述
MRF5S9150HR3 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HR3_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5S9150HR5 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HSR3 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF5S9150HSR5 功能描述:射频MOSFET电源晶体管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray