参数资料
型号: MRF7P20040HSR5
厂商: Freescale Semiconductor
文件页数: 12/16页
文件大小: 488K
描述: MOSFET RF N-CH 40W NI780HS-4
标准包装: 50
晶体管类型: LDMOS(双)
频率: 2.03GHz
增益: 18.2dB
电压 - 测试: 32V
额定电流: 10µA
电流 - 测试: 150mA
功率 - 输出: 10W
电压 - 额定: 65V
封装/外壳: NI-780HS-4
供应商设备封装: NI-780HS-4
包装: 带卷 (TR)
MRF7P20040HR3 MRF7P20040HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
1880
IRL
Gps
16
ACPR
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout
= 10 Watts Avg.
-- 2 2
-- 1 4
-- 1 6
-- 1 8
-- 2 0
18.5
18
-- 3 8
46
44
42
40
-- 2 8
-- 3 0
-- 3 2
-- 3 4
η
D
, DRAIN
EFFICIENCY (%)
ηD
G
ps
, POWER GAIN (dB)
17
15
14
1900 1920 1940 1960 1980 2000 2020 2040
38
-- 3 6
-- 2 4
PARC
PARC (dB)
-- 2 . 6
-- 1 . 8
-- 2
-- 2 . 2
-- 2 . 4
-- 2 . 8
ACPR (dBc)
VDD=32Vdc,Pout
=10W(Avg.)
IDQA
= 150 mA, VGSB
=1.5Vdc
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
1 10010
-- 6 0
-- 1 0
-- 2 0
-- 3 0
-- 5 0
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 4 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
VDD
=32Vdc,Pout
= 15 W (PEP), IDQA
= 150 mA
VGSB
= 1.5 Vdc, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2017.5 MHz
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
6
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
3
91215
24
48
44
40
36
32
28
η
D
,
DRAIN EFFICIENCY (%)
--1 dB = 5.48 W
--2 dB = 7.64 W
--3 dB = 10.07 W
VDD
=32Vdc,IDQA
= 150 mA
= 1.5 Vdc, f = 2017.5 MHz
ηD
ACPR
PARC
ACPR (dBc)
-- 3 8
-- 2 6
-- 2 8
-- 3 0
-- 3 4
-- 3 2
-- 3 6
18.5
G
ps
, POWER GAIN (dB)
18
17.5
17
16.5
16
15.5
Gps
17.5
16.5
15.5
14.5
13.5
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @
0.01% Probability on
CCDF
VGSB
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF
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