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| 型号： | MRF7P20040HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/16页 |
| 文件大小： | 488K |
| 描述： | MOSFET RF N-CH 40W NI780HS-4 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 2.03GHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 32V |
| 额定电流： | 10µA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780HS-4 |
| 供应商设备封装： | NI-780HS-4 |
| 包装： | 带卷 (TR) |
2
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=32Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
(1)
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 33.5
μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD
=32Vdc,IDA
= 150 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
= 0.325 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Functional Tests
(2,3)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=32Vdc,IDQA
= 150 mA, VGSB
=1.5Vdc,Pout
=10WAvg.,
f = 2025 MHz, Single--Carrier W--CDMA, IQ
Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
16
18.2
21
dB
Drain Efficiency
ηD
39
42.6
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.9
7.3
?
dB
Adjacent Channel Power Ratio
ACPR
?
--34.8
-- 3 0
dBc
Input Return Loss
IRL
?
--17.8
-- 1 0
dB
Typical Performance
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) VDD
=32Vdc,IDQA
= 150 mA, VGSB
=1.5Vdc,
2010--2025 MHz Bandwidth
Pout
@ 1 dB Compression Point, CW
P1dB
?
35
?
W
Pout
@ 3 dB Compression Point, CW
(4)
P3dB
?
50
?
W
IMD Symmetry @ 15 W PEP, Pout
where IMD Third Order
?
30 dBc
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
?
8
?
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
?
70
?
MHz
Gain Flatness in 15 MHz Bandwidth @ Pout
=10WAvg.
GF
?
0.04
?
dB
Gain Variation over Temperature
(--30°Cto+85°C)
?G
?
0.013
?
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
(4)
?P1dB
?
0.006
?
dB/°C
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
4. Exceeds recommended operating conditions. See
CW operation data in Maximum Ratings table.
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| MRF7S15100HR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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| MRF7S15100HR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S15100HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S15100HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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