参数资料
型号: MRF7P20040HSR5
厂商: Freescale Semiconductor
文件页数: 15/16页
文件大小: 488K
描述: MOSFET RF N-CH 40W NI780HS-4
标准包装: 50
晶体管类型: LDMOS(双)
频率: 2.03GHz
增益: 18.2dB
电压 - 测试: 32V
额定电流: 10µA
电流 - 测试: 150mA
功率 - 输出: 10W
电压 - 额定: 65V
封装/外壳: NI-780HS-4
供应商设备封装: NI-780HS-4
包装: 带卷 (TR)
8
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
VDD
=32Vdc,IDQA
= 150 mA, VGSB
=1.5Vdc,Pout
=10WAvg.
f
MHz
Zsource
?
Zload
?
1995
6.80 -- j13.11
14.67 + j4.09
2000
6.66 -- j13.03
14.87+ j3.82
2005
6.52 -- j12.93
15.08 + j3.58
2010
6.37 -- j12.85
15.27 + j3.29
2015
6.22 -- j12.78
15.45 + j3.00
2020
6.08 -- j12.69
15.62 + j2.77
2025
5.94 -- j12.60
15.80 + j2.44
2030
5.80 -- j12.49
15.95 + j2.14
2035
5.65 -- j12.40
16.08 + j1.82
Note: Measured with Peaking side open.
Zload
= Test circuit impedance as measured from
drain to ground.
Zsource
= Test circuit impedance as measured from
gate to ground.
Figure 11. Series Equivalent Source and Load Impedance ? Carrier Side
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
VDD
=32Vdc,IDQA
= 150 mA, VGSB
=1.5Vdc,Pout
=10WAvg.
f
MHz
Zsource
?
Zload
?
1995
8.45 -- j12.85
5.83 -- j10.09
2000
8.28 -- j12.79
5.57 -- j10.11
2005
8.11 -- j12.70
5.32 -- j10.08
2010
7.95 -- j12.63
5.06 -- j10.07
2015
7.79 -- j12.56
4.80 -- j10.06
2020
7.63 -- j12.48
4.55 -- j10.01
2025
7.50 -- j12.40
4.32 -- j9.96
2030
7.34 -- j12.32
4.06 -- j9.88
2035
7.19 -- j12.24
3.82 -- j9.81
Note: Measured with Carrier side open.
Zload
= Test circuit impedance as measured from
drain to ground.
Zsource
= Test circuit impedance as measured from
gate to ground.
Figure 12. Series Equivalent Source and Load Impedance ? Peaking Side
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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