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| 型号： | MRF7P20040HSR5 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/16页 |
| 文件大小： | 488K |
| 描述： | MOSFET RF N-CH 40W NI780HS-4 |
| 标准包装： | 50 |
| 晶体管类型： | LDMOS（双） |
| 频率： | 2.03GHz |
| 增益： | 18.2dB |
| 电压 - 测试： | 32V |
| 额定电流： | 10µA |
| 电流 - 测试： | 150mA |
| 功率 - 输出： | 10W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780HS-4 |
| 供应商设备封装： | NI-780HS-4 |
| 包装： | 带卷 (TR) |
16Rev. 2, 12/2010
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
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Document Number: MRF7P20040H
相关PDF资料 |
PDF描述 |
|---|---|
| MRF7S15100HR5 | MOSFET RF N-CH 28V 23W NI780 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF7S15100HR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S15100HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S15100HR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.5GHZ 28V 23W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S15100HSR3 | 功能描述:射频MOSFET电源晶体管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF7S15100HSR5 | 功能描述:射频MOSFET电源晶体管 HV7 1.5GHZ 28V23W NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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