参数资料
型号: MT28F200B5
厂商: Micron Technology, Inc.
英文描述: FLASH MEMORY
中文描述: 闪存
文件页数: 15/31页
文件大小: 558K
代理商: MT28F200B5
15
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
YES
NO
WRITE 40H or 10H
V
PP
= 3.3V or 5V
Start
WRITE Word or Byte
Address/Data
STATUS REGISTER
READ
SR7 = 1
Complete Status
Check (optional)
WRITE Complete
3
2
NO
Start (WRITE completed)
YES
SR4 = 0
SR3 = 0
NO
YES
BYTE/WORD WRITE Error
5
WRITE Successful
V Error
PP
4, 5
COMPLETE WRITE STATUS-CHECK
SEQUENCE
SELF-TIMED WRITE SEQUENCE
(WORD or BY TE WRITE)
1
NOTE:
1. Sequence may be repeated for additional BYTE or WORD WRITEs.
2. Complete status check is not required. However, if SR3 = 1, further WRITEs are inhibited until the status register is
cleared.
3. Device will be in status register read mode. To return to the array read mode, the FFH command must be issued.
4. If SR3 is set during a WRITE or BLOCK ERASE attempt, CLEAR STATUS REGISTER must be issued before further WRITE
or ERASE operations are allowed by the CEL.
5. Status register bits 3-5 must be cleared using CLEAR STATUS REGISTER.
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