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参数资料
| 型号： | MT28F200B5 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 闪存 |
| 文件页数： | 23/31页 |
| 文件大小： | 558K |
| 代理商： | MT28F200B5 |
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23
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb
SMART 3 BOOT BLOCK FLASH MEMORY
WRITE/ERASE CURRENT DRAIN
Commercial Temperature (0
°
C
≤
T
A
≤
+70
°
C) and Extended Temperature (-40
°
C
≤
T
A
≤
+85
°
C); V
CC
= +3.3V
±
0.3V
3.3V V
PP
5V V
PP
MAX
9
9
9
6
25
25
8
PARAMETER/CONDITION
WORD WRITE CURRENT: V
CC
SUPPLY
WORD WRITE CURRENT: V
PP
SUPPLY
BYTE WRITE CURRENT: V
CC
SUPPLY
BYTE WRITE CURRENT: V
PP
SUPPLY
ERASE CURRENT: V
CC
SUPPLY
ERASE CURRENT: V
PP
SUPPLY
ERASE SUSPEND CURRENT: V
CC
SUPPLY
(ERASE suspended)
ERASE SUSPEND CURRENT: V
PP
SUPPLY
(ERASE suspended)
SYMBOL
I
CC
7
I
PP
3
I
CC
8
I
PP
4
I
CC
9
I
PP
5
I
CC
10
MAX
9
9
9
6
25
30
8
UNITS NOTES
mA
mA
mA
mA
mA
mA
mA
5
5
6
6
7
I
PP
6
200
200
μ
A
RECOMMENDED DC WRITE/ERASE CONDITIONS
1
Commercial Temperature (0
°
C
≤
T
A
≤
+70
°
C) and Extended Temperature (-40
°
C
≤
T
A
≤
+85
°
C); V
CC
= +3.3V
±
0.3V
PARAMETER/CONDITION
V
PP
WRITE/ERASE lockout voltage
V
PP
voltage during WRITE/ERASE operation
V
PP
voltage during WRITE/ERASE operation
V
PP
voltage during WRITE/ERASE operation
Boot block unlock voltage
V
CC
WRITE/ERASE lockout voltage
SYMBOL
V
PPLK
V
PPH
1
V
PPH
2
V
PPH
3
V
HH
V
LKO
MIN
–
3
4.5
11.4
11.4
2
MAX
1.5
3.6
5.5
12.6
12.6
–
UNITS NOTES
V
V
V
V
V
V
2
3
4
NOTE:
1. WRITE operations are tested at V
CC
/V
PP
voltages equal to or less than the previous ERASE, and READ operations are
tested at V
CC
voltages equal to or less than the previous WRITE.
2. Absolute WRITE/ERASE protection when V
PP
≤
V
PPLK
.
3. When 3.3V V
CC
and V
PP
are used, Vcc cannot exceed V
PP
by more than 500mV during WRITE and ERASE operations.
4. For SmartVoltage-compatible production programming, 12V V
PP
is supported for a maximum of 100 cycles and may
be connected for up to 100 cumulative hours.
5. Applies to MT28F200B3 only.
6. Applies to MT28F002B3 and MT28F200B3 with BYTE = LOW.
7. Parameter is specified when device is not accessed. Actual current draw will be I
CC
10
plus read current if a READ is
executed while the device is in erase suspend mode.
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相关代理商/技术参数 |
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|---|---|
| MT28F200B5SG-6 B | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray |
| MT28F200B5SG-6 T | 制造商:Micron Technology Inc 功能描述:NOR Flash Parallel 5V 2Mbit 256K/128K x 8bit/16bit 60ns 44-Pin SOP Tray |
| MT28F200B5SG-8 B TR | 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 5V 2M-Bit 256K x 8/128K x 16 80ns 44-Pin SOP T/R |
| MT28F320A18 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:FLASH MEMORY |
| MT28F320J3 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:Q-FLASHTM MEMORY |
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