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| 型号： | MT46V2M32LG |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | DOUBLE DATA RATE DDR SDRAM |
| 中文描述： | 双倍数据速率的DDR SDRAM内存 |
| 文件页数： | 12/65页 |
| 文件大小： | 2360K |
| 代理商： | MT46V2M32LG |
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12
64Mb: x32 DDR SDRAM
2M32DDR-07.p65
–
Rev. 12/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32
DDR SDRAM
DESELECT
The DESELECT function (CS# HIGH) prevents new
commands from being executed by the DDR SDRAM.
The DDR SDRAM is effectively deselected. Operations
already in progress are not affected.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to
instruct the selected DDR SDRAM to perform a NOP
(CS# LOW). This prevents unwanted commands from
being registered during idle or wait states. Operations
already in progress are not affected.
LOAD MODE REGISTER
The mode registers are loaded via inputs A0-A10.
See mode register descriptions in the Register Defini-
tion section. The LOAD MODE REGISTER command
can only be issued when all banks are idle, and a sub-
sequent executable command cannot be issued until
t
MRD is met.
ACTIVE
The ACTIVE command is used to open (or activate)
a row in a particular bank for a subsequent access. The
value on the BA0, BA1 inputs selects the bank, and the
address provided on inputs A0-A10 selects the row.
This row remains active (or open) for accesses until a
PRECHARGE command is issued to that bank. A
PRECHARGE command must be issued before open-
ing a different row in the same bank.
READ
The READ command is used to initiate a burst read
access to an active row. The value on the BA0, BA1
inputs selects the bank, and the address provided on
inputs A0-A
7
selects the starting column location. The
value on input A8 determines whether or not auto
precharge is used. If auto precharge is selected, the row
being accessed will be precharged at the end of the
READ burst; if auto precharge is not selected, the row
will remain open for subsequent accesses.
WRITE
The WRITE command is used to initiate a burst write
access to an active row. The value on the BA0, BA1
inputs selects the bank, and the address provided on
inputs A0-A
7
selects the starting column location. The
value on input A8 determines whether or not auto
precharge is used. If auto precharge is selected, the row
being accessed will be precharged at the end of the
WRITE burst; if auto precharge is not selected, the row
will remain open for subsequent accesses. Input data
appearing on the DQs is written to the memory array
subject to the DM input logic level appearing coinci-
dent with the data. If a given DM signal is registered
LOW, the corresponding data will be written to memory;
if the DM signal is registered HIGH, the corresponding
data inputs will be ignored, and a WRITE will not be
executed to that byte/column location.
PRECHARGE
The PRECHARGE command is used to deactivate
the open row in a particular bank or the open row in all
banks. The bank(s) will be available for a subsequent
row access a specified time (
t
RP) after the PRECHARGE
command is issued. Input A8 determines whether one
or all banks are to be precharged, and in the case where
only one bank is to be precharged, inputs BA0, BA1
select the bank. Otherwise BA0, BA1 are treated as
“Don’t Care.” Once a bank has been precharged, it is in
the idle state and must be activated prior to any READ
or WRITE commands being issued to that bank. A
PRECHARGE command will be treated as a NOP if there
is no open row in that bank (idle state), or if the previ-
ously open row is already in the process of precharging.
AUTO PRECHARGE
Auto precharge is a feature which performs the same
individual-bank precharge function described above,
but without requiring an explicit command. This is ac-
complished by using A8 to enable auto precharge in
conjunction with a specific READ or WRITE command.
A precharge of the bank/row that is addressed with the
READ or WRITE command is automatically performed
upon completion of the READ or WRITE burst. Auto
precharge is nonpersistent in that it is either enabled
or disabled for each individual READ or WRITE com-
mand.
Auto precharge ensures that the precharge is initi-
ated at the earliest valid stage within a burst. This “ear-
liest valid stage” is determined as if an explicit
PRECHARGE command was issued at the earliest pos-
sible time, as described for each burst type in the Op-
eration section of this data sheet. The user must not
issue another command to the same bank until the
precharge time (
t
RP) is completed.
BURST TERMINATE
The BURST TERMINATE command is used to trun-
cate READ bursts (with auto precharge disabled). The
most recently registered READ command prior to the
BURST TERMINATE command will be truncated, as
shown in the Operation section of this data sheet.The
BURST TERMINATE does not precharge the row.
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