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参数资料
| 型号： | MT48LC8M8A2TG-8EL:GIT |
| 元件分类： | DRAM |
| 英文描述： | 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| 封装： | 0.400 INCH, PLASTIC, TSOP2-54 |
| 文件页数： | 10/55页 |
| 文件大小： | 1454K |
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18
64Mb: x4, x8, x16 SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAM.pmd – Rev. H; Pub. 12/04
2002 Micron Technology, Inc. All rights reserved.
64Mb: x4, x8, x16
SDRAM
Data from any READ burst may be truncated with a
subsequent WRITE command, and data from a fixed-
length READ burst may be immediately followed by
data from a WRITE command (subject to bus turn-
around limitations). The WRITE burst may be initiated
on the clock edge immediately following the last (or last
desired) data element from the READ burst, provided
that I/O contention can be avoided. In a given system
design, there may be a possibility that the device driv-
ing the input data will go Low-Z before the SDRAM DQs
go High-Z. In this case, at least a single-cycle delay
should occur between the last read data and the WRITE
command.
The DQM input is used to avoid I/O contention, as
shown in Figures 9 and 10. The DQM signal must be
asserted (HIGH) at least two clocks prior to the WRITE
command (DQM latency is two clocks for output
DON’T CARE
READ
NOP
DQM
CLK
DQ
DOUT n
T2
T1
T4
T3
T0
COMMAND
ADDRESS
BANK,
COL n
WRITE
DIN b
BANK,
COL b
T5
DS
tHZ
t
NOTE:
A CAS latency of three is used for illustration. The READ command
may be to any bank, and the WRITE command may be to any bank.
TRANSITIONING DATA
Figure 10
READ to WRITE With
Extra Clock Cycle
buffers) to suppress data-out from the READ. Once the
WRITE command is registered, the DQs will go High-Z
(or remain High-Z), regardless of the state of the DQM
signal, provided the DQM was active on the clock just
prior to the WRITE command that truncated the READ
command. If not, the second WRITE will be an invalid
WRITE. For example, if DQM was LOW during T4 in
Figure 10, then the WRITEs at T5 and T7 would be
valid, while the WRITE at T6 would be invalid.
The DQM signal must be de-asserted prior to the
WRITE command (DQM latency is zero clocks for input
buffers) to ensure that the written data is not masked.
Figure 9 shows the case where the clock frequency al-
lows for bus contention to be avoided without adding a
NOP cycle, and Figure 10 shows the case where the
additional NOP is needed.
Figure 9
READ to WRITE
DON’T CARE
READ
NOP
WRITE
NOP
CLK
T2
T1
T4
T3
T0
DQM
DQ
DOUT n
COMMAND
DIN b
ADDRESS
BANK,
COL n
BANK,
COL b
DS
tHZ
t
tCK
NOTE:
A CAS latency of three is used for illustration. The READ
command may be to any bank, and the WRITE command
may be to any bank. If a burst of one is used, then DQM is
not required.
TRANSITIONING DATA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT48LCM32B2P | 制造商:MICRON 制造商全称:Micron Technology 功能描述:SDR SDRAM MT48LC2M32B2 a?? 512K x 32 x 4 Banks |
| MT48NN | 功能描述:插线板 48POS AUDIO PATCHBAY RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48 |
| MT48NNX | 功能描述:插线板 48POS AUDIO PATCHBAY RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48 |
| MT48NS | 功能描述:插线板 1 RU PANEL 48 LF JA RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48 |
| MT48NSX | 功能描述:插线板 1/4" LF SLDR BAY 1RU, 2X24, NORM STR RoHS:否 制造商:Switchcraft 产品类型:Bantam (TT) 正规化: 高度/机架数量: 深度: 端接类型: 位置/触点数量:48 |
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