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参数资料
| 型号： | MX10EXAUI |
| 厂商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 16-BIT, FLASH, 30 MHz, MICROCONTROLLER, PQFP44 |
| 封装： | 10 X 10 MM, 1.40 MM HEIGHT, PLASTIC, MS-026, LQFP-44 |
| 文件页数： | 3/55页 |
| 文件大小： | 476K |
| 代理商： | MX10EXAUI |
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P/N:PM0625 Specifications subject to change without notice, contact your sales representatives for the most update information. REV. 1.0, JUL. 01, 2005
MX10EXA
FLASH EPROM MEMORY
GENERAL DESCRIPTION
The XA Flash memory augments EPROM functionality
with in-circuit electrical erasure and programming. The
Flash can be read and written as bytes. The Chip Erase
operation will erase the entire program memory. The Block
Erase function can erase any single Flash block. In-cir-
cuit programming and standard parallel programming are
both available. On-chip erase and write timing genera-
tion contribute to a user friendly programming interface.
The XA Flash reliably stores memory contents even af-
ter 10,000 erase and program cycles. The cell is designed
to optimize the erase and programming mechanisms. In
addition, the combination of advanced tunnel oxide pro-
cessing and low internal electric fields for erase and pro-
gramming operations produces reliable cycling. For In-
System Programming, the XA can use a single +5 V
power supply. Faster In-system Programming may be
obtained, if required, through the use of a+12V VPP sup-
ply. Parallel programming (using separate programming
hardware) uses a+12V VPP supply.
FEATURES
Flash EPROM internal program memory with Block
Erase.
Internal 2k byte fixed boot ROM, containing low-level
programming routines and a default loader. The Boot
ROM can be turned off to provide access to the full 64k
byte Flash memory.
Boot vector allows user provided Flash loader code to
reside anywhere in the Flash memory space. This
configuration provides flexibility to the user.
Default loader in Boot ROM allows programming via the
serial port without the need for a user provided loader.
Up to 1Mbyte external program memory if the internal
program memory is disabled(EA=0).
Programming and erase voltage VPP = VDD or 12V
±5% for ISP, 12V ±5% for parallel programming.Using
12V VPP for ISP may improve programming and erase
time.
Read/Programming/Erase:
- Byte-wise read (60 ns access time at 4.5 V).
- Byte Programming (1-2 minutes for 64 K flash,
depending on clock frequency).
In-circuit programming via user selected method, typi-
cally RS232 or parallel I/O port interface.
Programmable security for the code in the Flash
10,000 minimum erase/program cycles
10 year minimum data retention.
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