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参数资料
| 型号： | NCP1608BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/24页 |
| 文件大小： | 0K |
| 描述： | IC PFC CTLR/PRECONVERTER 8-SOIC |
| 标准包装： | 1 |
| 模式： | 临界传导（CRM） |
| 电流 - 启动： | 24µA |
| 电源电压： | 10.2 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCP1608BDR2GOSDKR |
NCP1608
Table 3. ELECTRICAL CHARACTERISTICS
V FB = 2.4 V, V Control = 4 V, Ct = 1 nF, V CS = 0 V, V ZCD = 0 V, C DRV = 1 nF, V CC = 12 V, unless otherwise specified
(For typical values, T J = 25 ° C. For min/m ax values, T J = ? 40 ° C to 125 ° C, unless otherwise specified)
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
STARTUP AND SUPPLY CIRCUITS
Startup Voltage Threshold
Minimum Operating Voltage
Supply Voltage Hysteresis
Startup Current Consumption
No Load Switching
Current Consumption
Switching Current Consumption
Fault Condition Current Consumption
V CC Increasing
V CC Decreasing
0 V < V CC < V CC(on) ? 200 mV
C DRV = open, 70 kHz Switching,
V CS = 2 V
70 kHz Switching, V CS = 2 V
No Switching, V FB = 0 V
V CC(on)
V CC(off)
H UVLO
I cc(startup)
I cc1
I cc2
I cc(fault)
11
8.8
2.2
?
?
?
?
12
9.5
2.5
24
1.4
2.1
0.75
12.5
10.2
2.8
35
1.7
2.6
0.95
V
V
V
m A
mA
mA
mA
OVERVOLTAGE AND UNDERVOLTAGE PROTECTION
Overvoltage Detect Threshold
Overvoltage Hysteresis
Overvoltage Detect Threshold
Propagation Delay
Undervoltage Detect Threshold
Undervoltage Detect Threshold
Propagation Delay
V FB = Increasing
V FB = 2 V to 3 V ramp,
dV/dt = 1 V/ m s
V FB = V OVP to V DRV = 10%
V FB = Decreasing
V FB = 1 V to 0 V ramp,
dV/dt = 10 V/ m s
V FB = V UVP to V DRV = 10%
V OVP /V REF
V OVP(HYS)
t OVP
V UVP
t UVP
105
20
?
0.25
100
106
60
500
0.31
200
108
100
800
0.4
300
%
mV
ns
V
ns
ERROR AMPLIFIER
Voltage Reference
T J = 25 ° C
V REF
2.475
2.500
2.525
V
T J = ? 40 ° C to 125 ° C
2.460
2.500
2.540
Voltage Reference Line Regulation
Error Amplifier Current Capability
V CC(on) + 200 mV < V CC < 20 V
V FB = 2.6 V
V FB = 1.08*V REF
V FB = 0.5 V
V REF(line)
I EA(sink)
I EA(sink)OVP
I EA(source)
? 10
6
10
? 250
?
10
20
? 210
10
20
30
? 110
mV
m A
Transconductance
V FB = 2.4 V to 2.6 V
gm
m S
T J = 25 ° C
T J = ? 40 ° C to 125 ° C
90
70
110
110
120
135
Feedback Pin Internal Pull ? Down
Resistor
Feedback Bias Current
Control Bias Current
Maximum Control Voltage
Minimum Control Voltage to Generate
Drive Pulses
Control Voltage Range
V FB = V UVP to V REF
V FB = 2.5 V
V FB = 0 V
I Control(pullup) = 10 m A,
V FB = V REF
V Control = Decreasing until
V DRV is low, V Ct = 0 V
V EAH – Ct (offset)
R FB
I FB
I Control
V EAH
Ct (offset)
V EA(DIFF)
2
0.25
? 1
5
0.37
4.5
4.6
0.54
?
5.5
0.65
4.9
10
1.25
1
6
0.88
5.3
M W
m A
m A
V
V
V
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