参数资料
| 型号： | NCP4330DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 11/17页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER POST REGULATION 8-SOIC |
| 标准包装： | 1 |
| 输出隔离： | 非隔离 |
| 频率范围： | 达 400kHz |
| 输入电压： | 5.2 V ~ 20 V |
| 输出电压： | 0.9 V ~ 23.5 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP4330DR2GOSCT |
NCP4330
Ils * on + 1 *
, that is 500 mA.
Low ? Side Driver Stage
The timing diagram of page 2 portrays the sequencing
driven by the NCP4330.
The low ? side drive is controlled by an internal
comparator that compares the C_ramp voltage to the internal
reference 2.5 V (1.0 V hysteresis). When the C_ramp
exceeds the 2.5 V reference, the comparator turns high
forcing the low ? side MOSFET off. 100 ns later, the
high ? side MOSFET switches on.
When a reset signal is applied to the reset pin, the C_ramp
capacitor is grounded. As a consequence, the internal
comparator turns low and forces the low ? side MOSFET on.
100 ns later, the high ? side MOSFET switches off.
The low ? side drive is designed to drive on and off a 25 nC
gate charge power MOSFET, in 25 ns typical.
1. Low ? Side MOSFET Turn On:
In nominal operation, the body diode is already ON when
the low ? side MOSFET turns on. The energy Qg to be
supplied is then approximately half the energy necessary if
the drain source voltage was high.
The necessary current capability is then:
25 nC
2 25 ns
80.0
0
6.50
16.0
40.0
Vin
vin1
lind
i(l1)
60.0
? 80.0
4.50
12.0
20.0
ls_drv
40.0
? 160
2.50
8.00
0
LS_DRV
20.0
0
? 240
? 320
500 M
? 1.50
4.00
0
? 20.0
? 40.0
4.5010 M
4.5015 M
V Q
4.5020 M
I Q
4.5025 M
4.5030 M
irl
v(vsn)
Time in Secs
Figure 28. Low ? Side MOSFET Turn ON
http://onsemi.com
11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP4331 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Synchronous Buck Controller for High Efficiency Post Regulation |
| NCP4331DBR2G | 功能描述:IC REG CTRLR BUCK PWM 16-TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:100% 电源电压:8.2 V ~ 30 V 降压:无 升压:无 回扫:是 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:0°C ~ 70°C 封装/外壳:8-DIP（0.300"，7.62mm） 包装:管件 产品目录页面:1316 (CN2011-ZH PDF) |
| NCP4331DR2G | 功能描述:功率驱动器IC PWM CONTROLLER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP433FCT2G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1.5A Ultra-Small Controlled Load Switch with Auto-Discharge Path |
| NCP434 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2A Ultra-Small Controlled Load Switch with |
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