参数资料
型号: NCP4330DR2G
厂商: ON Semiconductor
文件页数: 12/17页
文件大小: 0K
描述: IC DRIVER POST REGULATION 8-SOIC
标准包装: 1
输出隔离: 非隔离
频率范围: 达 400kHz
输入电压: 5.2 V ~ 20 V
输出电压: 0.9 V ~ 23.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 剪切带 (CT)
其它名称: NCP4330DR2GOSCT
NCP4330
Ils * off + 1 *
, that is 500 mA.
2. Low ? Side MOSFET Turn Off:
The high ? side MOSFET turns on about 100 ns after the
low ? side one is switched off. During this time when both
switches are off, the body diode of the low ? side MOSFET
derives the inductor current (in nominal load condition,
when the coil current is positive, i.e., it flows toward the
output). As a result, the LS MOSFET turns off while its
drain ? source voltage keeps around zero due to its body
diode activation.
Again, the energy Qg to be supplied is then approximately
half its value if the drain source voltage was high.
The necessary current capability is then:
25 nC
2 25 ns
High dV/dt occur in the application. When the high ? side
MOSFET turns on, the drain ? source voltage of the low ? side
MOSFET sharply increases, producing a huge current
through the Crss capacitor. This current may produce some
parasitic turn on of the LS MOSFET if the driver impedance
is not low enough to absorb this current without significant
increase of the driver voltage. The driver current capability
has then been increased to 750 mA so that it can effectively
face a 30 V variation in 10 ns with a MOSFET exhibiting a
250 pF Crss.
vin1
80.0
0
6.50
16.0
40.0
Vin
60.0
? 80.0
4.50
12.0
20.0
lind
i(l1)
LS_DRV
40.0
? 160
2.50
8.00
0
ls_drv
20.0
0
? 240
? 320
500 M
? 1.50
4.00
0
? 20.0
? 40.0
I Q
V Q
v(vsn)
irl
4.4990 M
4.4995 M
4.5000 M
4.5005 M
4.5010 M
Time in Secs
Figure 29. Low ? Side MOSFET Turn Off
http://onsemi.com
12
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