参数资料
| 型号： | NCP4330DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 14/17页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER POST REGULATION 8-SOIC |
| 标准包装： | 1 |
| 输出隔离： | 非隔离 |
| 频率范围： | 达 400kHz |
| 输入电压： | 5.2 V ~ 20 V |
| 输出电压： | 0.9 V ~ 23.5 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP4330DR2GOSCT |
NCP4330
2. High ? Side Turn Off:
The high ? side MOSFET turns in a very soft way (no
current, no voltage). The turn off drive is in fact designed to
face the high dV/dt that occurs when the MOSFET Q1
abruptly turns on. The current capability has been set to
750 mA so that a 30 V variation in 10 ns cannot parasitically
switch on a high ? side MOSFET exhibiting a 250 pF Crss.
8.00
80.0
0
16.0
40.0
Vin
vin1
lind
i(l1)
4.00
60.0
? 80.0
12.0
20.0
hs_drv
HS_DRV
0
40.0
? 160
8.00
0
? 4.00
20.0
? 240
4.00
? 20.0
I Q
ihs
V Q
? 8.00
0
? 320
0
? 40.0
4.5010 M
4.5015 M
4.5020 M
4.5025 M
4.5030 M
vdshs
Time in Secs
Figure 31. High ? Side MOSFET Turn Off
3. Input Voltage Limitation:
Traditional high ? side drivers turn off the MOSFET they
control, by forcing nearly 0 V between gate and source. The
NCP4330 high ? side stage is not referenced to the MOSFET
source but to ground, and the HS MOSFET is forced off by
grounding its gate. This technique that saves the pin that is
traditionally connected to the MOSFET source, allows a
robust turn off of the power switch. In effect, the low ? side
MOSFET that is ON when the high ? side is off, forces the
High ? side MOSFET source to approximately 0 V.
However the high ? side MOSFET turn on is preceded by
a 100 ns phase during which both the low ? side and
high ? side power switches are off. During this 100 ns phase,
the drain source voltage of the low ? side MOSFET may get
high, given that in light load operation, the L2 coil current
may get negative and flow from the load toward the input
through the HS MOSFET body diode. In this case, the gate
source voltage of the high ? side MOSFET becomes negative
and substantially equal to the input voltage amplitude of the
post ? regulator in absolute value.
Therefore, the maximum value of the pulsed input
voltage should be chosen lower than the maximum
source ? gate voltage the HS MOSFET can sustain.
Traditional MOSFET Vgs maximum ratings are generally
+/ ? 20 V. Therefore, with this kind of MOSFETs, the input
voltage must keep below 20 V (possible spikes being
included).
Undervoltage Lockout
An undervoltage lockout comparator is incorporated to
guarantee that the device is fully functional before enabling
the output stages. The NCP4330 starts to operate when the
power supply V DD exceeds 5.8 V. A 600 mV hysteresis
avoids that some noise on the V DD might produce some
erratic turns on and off of the device. When the NCP4330
detects an undervoltage lockout condition, it keeps both the
high ? side and low ? side drivers in low state.
The undervoltage lockout has a 4.9 V minimum threshold
(falling). As a consequence, around 3.4 V are available on
the driver outputs to force on the MOSFET. Such a level
allows to properly drive most MOSFETs.
http://onsemi.com
14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP4331 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Synchronous Buck Controller for High Efficiency Post Regulation |
| NCP4331DBR2G | 功能描述:IC REG CTRLR BUCK PWM 16-TSSOP RoHS:是 类别:集成电路 (IC) >> PMIC - 稳压器 - DC DC 切换控制器 系列:- 标准包装:2,500 系列:- PWM 型:电流模式 输出数:1 频率 - 最大:500kHz 占空比:100% 电源电压:8.2 V ~ 30 V 降压:无 升压:无 回扫:是 反相:无 倍增器:无 除法器:无 Cuk:无 隔离:是 工作温度:0°C ~ 70°C 封装/外壳:8-DIP（0.300"，7.62mm） 包装:管件 产品目录页面:1316 (CN2011-ZH PDF) |
| NCP4331DR2G | 功能描述:功率驱动器IC PWM CONTROLLER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP433FCT2G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:1.5A Ultra-Small Controlled Load Switch with Auto-Discharge Path |
| NCP434 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:2A Ultra-Small Controlled Load Switch with |
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