参数资料
| 型号： | NCP4330DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/17页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER POST REGULATION 8-SOIC |
| 标准包装： | 1 |
| 输出隔离： | 非隔离 |
| 频率范围： | 达 400kHz |
| 输入电压： | 5.2 V ~ 20 V |
| 输出电压： | 0.9 V ~ 23.5 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP4330DR2GOSCT |
NCP4330
MAXIMUM RATINGS
Symbol
BST
RST
C_ramp
I_ramp
V DD
R q JA
T J
T Jmax
T Smax
T Lmax
Rating
Bootstrap Input
Reset Input
Timing Capacitor Node (Note 1)
Regulation Current Input (Note 1)
Supply Voltage
Thermal Resistance
Operating Junction Temperature Range (Note 2)
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10 s)
Value
? 0.3, +40
? 0.3, +5.0
? 0.3, V rampHL
? 0.3, Vcl
? 0.3, +20
180
? 40, +125
150
? 65 to +150
300
Unit
V
V
V
V
V
° C/W
° C
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V rampHL and Vcl are the internal clamp levels of pins 4 and 5 respectively.
2. The maximum junction temperature should not be exceeded.
ELECTRICAL CHARACTERISTICS (V DD = 10 V, V BST = 25 V, T J from ? 25 ° C to +125 ° C, unless otherwise specified.)
Symbol
Characteristic
Min
Typ
Max
Unit
High ? Side Output Stage
V HS_H
V HS_L
I source_HS
I sink_HS
t r ? HS
t f ? HS
T LS ? HS
High ? Side Output Voltage in High State @ Isource = ? 100 mA
High ? Side Output Voltage in Low State @ Isink = 100 mA
Current Capability of the High ? Side Drive Output in High State
Current Capability of the High ? Side Drive Output in Low State
High ? Side Output Voltage Rise Time from 0.5 V to 12 V (C L = 1.0 nF)
High ? Side Output Voltage Fall Time from 20 V to 0.5 V (C L = 1.0 nF)
Delay from Low ? Side Gate Drive Low (High) to High ? Side Drive High (Low)
22.5
?
?
?
?
?
?
23.5
0.9
0.5
0.75
25
25
100
?
1.5
?
?
?
?
?
V
V
A
A
ns
ns
ns
Low ? Side Output Stage
V LS_H
V LS_L
I source_LS
I sink_LS
t r ? LS
t f ? LS
Low ? Side Output Voltage in High State @ Isource = ? 500 mA
Low ? Side Output Voltage in Low State @ Isink = 750 mA
Current Capability of the Low ? Side Drive Output in High State
Current Capability of the Low ? Side Drive Output in Low State
Low ? Side Output Voltage Rise Time from 0.5 V to 7.0 V (C L = 2.0 nF)
Low ? Side Output Voltage Fall Time from 9.5 V to 0.5 V (C L = 2.0 nF)
7.4
?
?
?
?
?
8.2
1.3
0.5
0.75
25
25
?
1.7
?
?
?
?
V
V
A
A
ns
ns
Ramp Control
I charge
Vcl
Vref L
Vref H
V rampHL
V rampLL
C_ramp Current
@ Ipin5 = 100 m A
@ Ipin5 = 1.5 mA
Pin5 Clamp Voltage @ Ipin5 = 1.5 mA
Ramp Control Reference Voltage, Vpin4 Falling
Ramp Control Reference Voltage, Vpin4 Rising
Ramp Voltage Maximum Value @ Ipin5 = 1.5 mA
Ramp Voltage Low Voltage @ Ipin5 = 1.5 mA
90
1400
0.7
1.3
2.25
3.2
?
102
1590
1.4
1. 5
2.5
3.6
?
110
1800
2.1
1.7
2.75
4.2
100
m A
V
V
V
V
mV
http://onsemi.com
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