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| 型号： | OPA659EVM |
| 厂商： | Texas Instruments |
| 文件页数： | 1/32页 |
| 文件大小： | 0K |
| 描述： | EVAL MODULE FOR OPA659 |
| 标准包装： | 1 |
| 每 IC 通道数： | 1 - 单 |
| 放大器类型： | J-FET |
| 转换速率： | 2550 V/µs |
| -3db带宽： | 650MHz |
| 电流 - 输出 / 通道： | 70mA |
| 工作温度： | -40°C ~ 85°C |
| 电流供应（主 IC）： | 32mA |
| 电压 - 电源，单路/双路(±)： | ±3.5 V ~ 6.5 V |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | OPA659 |
| 其它名称： | 296-30974 OPA659EVM-ND |
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OP
A659
1
FEATURES
DESCRIPTION
APPLICATIONS
TRANSIMPEDANCEGAIN
vsFREQUENCY(C =22pF)
D
130
120
110
100
90
80
70
60
50
40
T
ransimpedanceGain
(dB
)
W
100k
1M
10M
100M
Frequency(Hz)
R =1M ,C =Open
F
W
R =1k ,C =4.7pF
F
W
R =10k ,
C =Open
F
W
R =10k ,C =1.5pF
F
W
R =100k ,C =Open
F
W
R =100k ,
C =0.5pF
F
W
R =1k ,C =Open
F
W
OPA659
+6V
R
OUT
0.1 F
m
10 F
m
0.1 F
m
10 F
m
-
6V
50
Load
W
I
D
C
D
C
F
V
OUT
R
F
Photo
Diode
-
V
B
l
www.ti.com ............................................................................................................................................ SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009
Wideband, Unity-Gain Stable, JFET-Input
OPERATIONAL AMPLIFIER
23
HIGH BANDWIDTH: 650MHz (G = +1V/V)
The OPA659 combines a very wideband, unity-gain
stable, voltage-feedback operational amplifier with a
HIGH SLEW RATE: 2550V/s (4V Step)
JFET-input stage to offer an ultra-high dynamic range
EXCELLENT THD: –78dBc at 10MHz
amplifier
for
high
impedance
buffering
in
data
LOW INPUT VOLTAGE NOISE: 8.9nV/√Hz
acquisition
applications
such
as
oscilloscope
FAST OVERDRIVE RECOVERY: 8ns
front-end amplifiers and machine vision applications
such as photodiode transimpedance amplifiers used
FAST SETTLING TIME (1% 4V Step): 8ns
in wafer inspection.
LOW INPUT OFFSET VOLTAGE: ±1mV
The
wide
650MHz
unity-gain
bandwidth
is
LOW INPUT BIAS CURRENT: ±10pA
complemented by a very high 2550V/
s slew rate.
HIGH OUTPUT CURRENT: 70mA
The high input impedance and low bias current
provided by the JFET input are supported by the low
8.9nV/
√Hz input voltage noise to achieve a very low
HIGH-IMPEDANCE DATA ACQUISITION INPUT
integrated
noise
in
wideband
photodiode
AMPLIFIER
transimpedance applications.
HIGH-IMPEDANCE OSCILLOSCOPE INPUT
Broad transimpedance bandwidths are possible with
AMPLIFIER
the high 350MHz gain bandwidth product of this
WIDEBAND PHOTODIODE TRANSIMPEDANCE
device.
AMPLIFIER
Where lower speed with lower quiescent current is
WAFER SCANNING EQUIPMENT
required, consider the OPA656. Where unity-gain
stability is not required, consider the OPA657.
RELATED
OPERATIONAL AMPLIFIER
PRODUCTS
VOLTAGE
SLEW
BW
VS
RATE
NOISE
AMPLIFIER
DEVICE
(V)
(MHz)
(V/
s)
(nV/
√Hz)
DESCRIPTION
Unity-Gain
+5
200
300
5.80
Stable CMOS
Fixed Gain of
OPA653
±6
500
2675
6.1
+2V/V
JFET-Input
Unity-Gain
±5
500
290
7
Stable
JFET-Input
Gain of +7
±5
1600
700
4.8
Stable
JFET-Input
Unity-Gain
±15
16
55
4.5
Stable
DI-FET-Input
Unity-Gain
±15
105
900
7
Stable
JFET-Input
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
PowerPAD is a trademark of Texas Instruments.
3
All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright 2008–2009, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OPA659IDBVR | 功能描述:高速运算放大器 650MHz unity gain stable JFET Inp amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDBVT | 功能描述:高速运算放大器 650MHz unity gain stable JFET Inp amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDRBR | 功能描述:高速运算放大器 650MHz unity gain stable JFET inp Amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDRBT | 功能描述:高速运算放大器 650MHz unity gain stable JFET inp Amp RoHS:否 制造商:Texas Instruments 通道数量:1 电压增益 dB:116 dB 输入补偿电压:0.5 mV 转换速度:55 V/us 工作电源电压:36 V 电源电流:7.5 mA 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| OPA659IDRBT | 制造商:Texas Instruments 功能描述:Operational Amplifier (Op-Amp) IC 制造商:Texas Instruments 功能描述:IC, OP-AMP, 350MHZ, 2550V/ us, SON-8 |
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